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	Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy
	Zhao, Jie1,2; Zeng, Yiping1,2; Liu, Chao1,2; Li, Yanbo1,2
刊名	Journal of crystal growth
	2010-04-15
卷号	312期号:9页码:1491-1495
关键词	Reflection high-energy electron diffraction Atomic force microscopy Molecular beam epitaxy Zinc compounds Semiconducting ii-vi materials
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2010.01.032
通讯作者	Zhao, jie(jiezhao_sub@163.com)
英文摘要	Znte thin films have been grown on gaas(0 0 1) substrates at different temperatures with constant zn and te beam equivalent pressures (beps) by molecular beam epitaxy (mbe). in situ reflection high-energy electron diffraction (rheed) observation indicates that two-dimensional (2d) growth mode can be established after around one-minute three-dimensional (3d) nucleation by increasing the substrate temperature to 340 degrees c. we found that zn desorption from the znte surface is much greater than that of te at higher temperatures, and estimated the zn sticking coefficient by the evolution of growth rate. the zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees c. the znte epilayer grown at 360 degrees c displays the narrowest full-width at half-maximum (fwhm) of 660 arcsec from (0 0 4) reflection in double-crystal x-ray rocking curve (dcxrc) measurements. the surface morphology of znte epilayers is strongly dependent on the substrate temperature, and the root-mean-square (rms) roughness diminishes drastically with the increase in temperature. (c) 2010 elsevier b.v. all rights reserved.
WOS关键词	VAPOR-PHASE EPITAXY ; OPTICAL-PROPERTIES ; ZNSE ; MORPHOLOGY ; LAYERS ; FILMS ; GAAS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000277530200004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427865
专题	半导体研究所
通讯作者	Zhao, Jie
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Jie,Zeng, Yiping,Liu, Chao,et al. Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy[J]. Journal of crystal growth,2010,312(9):1491-1495.
APA	Zhao, Jie,Zeng, Yiping,Liu, Chao,&Li, Yanbo.(2010).Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy.Journal of crystal growth,312(9),1491-1495.
MLA	Zhao, Jie,et al."Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy".Journal of crystal growth 312.9(2010):1491-1495.

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