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	Electron tunneling through a planar single barrier in hgte quantum wells with inverted band structures
	Zhang, L. B.1; Zhai, Feng2,3; Chang, Kai1
刊名	Physical review b
	2010-06-21
卷号	81期号:23页码:6
ISSN号	1098-0121
DOI	10.1103/physrevb.81.235323
通讯作者	Zhang, l. b.()
英文摘要	We present a theoretical study on the electron tunneling through a single barrier created in a two-dimensional electron gas (2deg) and quantum spin hall (qsh) bar in a hgte/cdte quantum well with inverted band structures. for the 2deg, the transmission shows the fabry-perot resonances for the interband tunneling process and is blocked when the incident energy lies in the bulk gap of the barrier region. for the qsh bar, the transmission gap is reduced to the edge gap caused by the finite size effect. instead, transmission dips appear due to the interference between the edge states and the bound states originated from the bulk states. such a fano-like resonance leads to a sharp dip in the transmission which can be observed experimentally.
WOS关键词	INSULATOR ; SURFACE ; PHASE
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000279014800002
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427855
专题	半导体研究所
通讯作者	Zhang, L. B.
作者单位	1.Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China 3.Dalian Univ Technol, Coll Adv Sci & Technol, Dalian 116024, Peoples R China
推荐引用方式 GB/T 7714	Zhang, L. B.,Zhai, Feng,Chang, Kai. Electron tunneling through a planar single barrier in hgte quantum wells with inverted band structures[J]. Physical review b,2010,81(23):6.
APA	Zhang, L. B.,Zhai, Feng,&Chang, Kai.(2010).Electron tunneling through a planar single barrier in hgte quantum wells with inverted band structures.Physical review b,81(23),6.
MLA	Zhang, L. B.,et al."Electron tunneling through a planar single barrier in hgte quantum wells with inverted band structures".Physical review b 81.23(2010):6.

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