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	Low temperature annealing effects on the structure and optical properties of zno films grown by pulsed laser deposition
	Zhu, B. L.1; Zhao, X. Z.2; Su, F. H.3; Li, G. H.3; Wu, X. G.3; Wu, J.1; Wu, R.1
刊名	Vacuum
	2010-06-04
卷号	84期号:11页码:1280-1286
关键词	Zno Pulsed laser deposition (pld) Annealing treatment Photoluminescence (pl)
ISSN号	0042-207X
DOI	10.1016/j.vacuum.2010.01.059
通讯作者	Zhu, b. l.(zhubailin97@hotmail.com)
英文摘要	Zno thin films were deposited on glass substrates at room temperature (rt) similar to 500 degrees c by pulsed laser deposition (pld) technique and then were annealed at 150-450 degrees c in air. the effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by xrd, sem, transmittance spectra, and photoluminescence (pl). the results showed that the c-axis orientation of zno thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees c, and thin films densified for the films deposited at rt with increasing annealing temperature. the transmittance spectra indicated that e(g) of thin films showed a decreased trend with annealing temperature. from the pl measurements, there was a general trend, that is uv emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees c; no uv emission was observed for the films deposited at rt regardless of annealing treatment. improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of uv emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of uv emission. it seems that annealing at lower temperature in air is an effective method to improve the uv emission for thin films deposited on glass substrate at substrate temperature above rt. (c) 2010 elsevier ltd. all rights reserved.
WOS关键词	OXIDE THIN-FILMS ; SUBSTRATE-TEMPERATURE ; OXYGEN-PRESSURE ; ELECTRICAL-PROPERTIES ; PLD TECHNIQUE ; AL FILMS ; EMISSION
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000278892400006
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427797
专题	半导体研究所
通讯作者	Zhu, B. L.
作者单位	1.Wuhan Univ Sci & Technol, Sch Met & Mat, Dept Met Mat Engn, Wuhan 430081, Peoples R China 2.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhu, B. L.,Zhao, X. Z.,Su, F. H.,et al. Low temperature annealing effects on the structure and optical properties of zno films grown by pulsed laser deposition[J]. Vacuum,2010,84(11):1280-1286.
APA	Zhu, B. L..,Zhao, X. Z..,Su, F. H..,Li, G. H..,Wu, X. G..,...&Wu, R..(2010).Low temperature annealing effects on the structure and optical properties of zno films grown by pulsed laser deposition.Vacuum,84(11),1280-1286.
MLA	Zhu, B. L.,et al."Low temperature annealing effects on the structure and optical properties of zno films grown by pulsed laser deposition".Vacuum 84.11(2010):1280-1286.

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