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	High characteristic temperature 1.3 mu m inas/gaas quantum-dot lasers grown by molecular beam epitaxy
	Ji Hai-Ming1; Yang Tao1; Cao Yu-Lian2; Xu Peng-Fei1; Gu Yong-Xian1; Ma Wen-Quan2; Wang Zhan-Guo1
刊名	Chinese physics letters
	2010-02-01
卷号	27期号:2页码:3
ISSN号	0256-307X
DOI	10.1088/0256-307x/27/2/027801
通讯作者	Yang tao(tyang@semi.ac.cn)
英文摘要	We report the molecular beam epitaxy growth of 1.3 mu m inas/gaas quantum-dot (qd) lasers with high characteristic temperature t(0). the active region of the lasers consists of five-layer inas qds with p-type modulation doping. devices with a stripe width of 4 mu m and a cavity length of 1200 mu m are fabricated and tested in the pulsed regime under different temperatures. it is found that t(0) of the qd lasers is as high as 532k in the temperature range from 10 degrees c to 60 degrees c. in addition, the aging test for the lasers under continuous wave operation at 100 degrees c for 72 h shows almost no degradation, indicating the high crystal quality of the devices.
WOS关键词	THRESHOLD CURRENT ; ROOM-TEMPERATURE ; DEPENDENCE ; PHOTOLUMINESCENCE
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000274360800080
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427785
专题	半导体研究所
通讯作者	Yang Tao
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Ji Hai-Ming,Yang Tao,Cao Yu-Lian,et al. High characteristic temperature 1.3 mu m inas/gaas quantum-dot lasers grown by molecular beam epitaxy[J]. Chinese physics letters,2010,27(2):3.
APA	Ji Hai-Ming.,Yang Tao.,Cao Yu-Lian.,Xu Peng-Fei.,Gu Yong-Xian.,...&Wang Zhan-Guo.(2010).High characteristic temperature 1.3 mu m inas/gaas quantum-dot lasers grown by molecular beam epitaxy.Chinese physics letters,27(2),3.
MLA	Ji Hai-Ming,et al."High characteristic temperature 1.3 mu m inas/gaas quantum-dot lasers grown by molecular beam epitaxy".Chinese physics letters 27.2(2010):3.

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