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	Growth and characterization of algan/gan heterostructure using unintentionally doped aln/gan superlattices as barrier layer
	Zhang, M. L.1; Wang, X. L.1,2; Xiao, H. L.1; Wang, C. M.1; Yang, C. B.1; Tang, J.1; Feng, C.1; Jiang, L. J.1; Hu, G. X.1; Ran, J. X.1
刊名	Superlattices and microstructures
	2009-02-01
卷号	45期号:2页码:54-59
关键词	Algan/gan heterostructure Superlattices (sls) Root mean square roughness (rms) Sheet resistance
ISSN号	0749-6036
DOI	10.1016/j.spmi.2008.11.028
通讯作者	Zhang, m. l.(mlzhang@semi.ac.cn)
英文摘要	Algan/gan heterostructure using unintentionally doped aln/gan superlattices (sls) as barrier layer is grown on c-plane sapphire by metal organic vapor deposition (mocvd). compared with the conventional si-doped structure, electrical property is improved. an average sheet resistance of 287.1 omega/square and high resistance uniformity of 0.82% are obtained across the 2-inch epilayer wafer with an equivalent al composition of 38%. hall measurement shows that the mobility of two-dimensional electron gas (2deg) is 1852 cm(2)/v s with a sheet carrier density of 1.2 x 10(13) cm(-2) at room temperature. the root mean square roughness (rms) value is 0.159 nm with 5 x 5 mu m(2) scan area and the monolayer steps are clearly observed. the reason for the property improvement is discussed. (c) 2008 elsevier ltd. all rights reserved.
WOS关键词	HEMT STRUCTURES ; AL-CONTENT ; GAN-HEMT ; SAPPHIRE ; GANHEMT
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD
WOS记录号	WOS:000263616500002
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427773
专题	半导体研究所
通讯作者	Zhang, M. L.
作者单位	1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhang, M. L.,Wang, X. L.,Xiao, H. L.,et al. Growth and characterization of algan/gan heterostructure using unintentionally doped aln/gan superlattices as barrier layer[J]. Superlattices and microstructures,2009,45(2):54-59.
APA	Zhang, M. L..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Yang, C. B..,...&Wang, ZH. G..(2009).Growth and characterization of algan/gan heterostructure using unintentionally doped aln/gan superlattices as barrier layer.Superlattices and microstructures,45(2),54-59.
MLA	Zhang, M. L.,et al."Growth and characterization of algan/gan heterostructure using unintentionally doped aln/gan superlattices as barrier layer".Superlattices and microstructures 45.2(2009):54-59.

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