| Temperature insensitivity of optical properties of inas/gaas quantum dots due to a pregrown ingaas quantum well | |
| Liang Zhi-Mei; Jin Can; Jin Peng; Wu Ju; Wang Zhan-Guo | |
| 刊名 | Chinese physics letters
 |
| 2009 | |
| 卷号 | 26期号:1页码:3 |
| ISSN号 | 0256-307X |
| 通讯作者 | Liang zhi-mei(lzhm4321@red.semi.ac.cn) |
| 英文摘要 | Both the peak position and linewidth in the photoluminescence spectrum of the inas/gaas quantum dots usually vary in an anomalous way with increasing temperature. such anomalous optical behaviour is eliminated by inserting an in(0.2)ga(0.8)as quantum well below the quantum dot layer in molecular beam epitaxy. the insensitivity of the photoluminescence spectra to temperature is explained in terms of the effective carrier redistribution between quantum dots through the in(0.2)ga(0.8)as quantum well. |
| WOS关键词 | EXCITATION DEPENDENCE ; LINE-SHAPE ; PHOTOLUMINESCENCE ; DEPOSITION ; HETEROSTRUCTURES ; EPITAXY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000262866100090 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2427687 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liang Zhi-Mei |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liang Zhi-Mei,Jin Can,Jin Peng,et al. Temperature insensitivity of optical properties of inas/gaas quantum dots due to a pregrown ingaas quantum well[J]. Chinese physics letters,2009,26(1):3. |
| APA | Liang Zhi-Mei,Jin Can,Jin Peng,Wu Ju,&Wang Zhan-Guo.(2009).Temperature insensitivity of optical properties of inas/gaas quantum dots due to a pregrown ingaas quantum well.Chinese physics letters,26(1),3. |
| MLA | Liang Zhi-Mei,et al."Temperature insensitivity of optical properties of inas/gaas quantum dots due to a pregrown ingaas quantum well".Chinese physics letters 26.1(2009):3. |
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