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	Epitaxial growth of alingan quaternary alloys by rf-mbe
	Wang Bao-Zhu1,2; Wang Xiao-Liang2
刊名	Journal of inorganic materials
	2009-05-01
卷号	24期号:3页码:559-562
关键词	Alingan Rf-mbe Structural properties Optical properties
ISSN号	1000-324X
DOI	10.3724/sp.j.1077.2009.00559
通讯作者	Wang bao-zhu(wangbz@semi.ac.cn)
英文摘要	Alingan quaternary alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (rf-mbe). alingan quaternary alloys with different compositions were acquired by changing the al cell's temperature. the streaky rheed patterns were observed during alingan quaternary alloys growth. scanning electron microscope (sem), rutherford back-scattering spectrometry (rbs), x-ray diffraction (xrd) and cathodoluminescence (cl) were used to characterize the structural and optical properties of the alingan alloys. the experimental results show that the alingan quaternary alloys grow on the gan buffer in the layer-by-layer growth mode. when the al cell's temperature is 920 degrees c, the al/in ratio in the alingan quaternary alloys is about 4.7, and the alingan can acquire better crystal and optical quality. the x-ray and cl full-width at half-maximum (fwhm) of the alingan are 5arcmin and 25nm, respectively.
WOS关键词	MOLECULAR-BEAM EPITAXY
WOS研究方向	Materials Science
WOS类目	Materials Science, Ceramics
语种	英语
出版者	SCIENCE PRESS
WOS记录号	WOS:000266303700028
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427583
专题	半导体研究所
通讯作者	Wang Bao-Zhu
作者单位	1.Hebei Univ Sci & Technol, Inst Informat Sci & Technol, Shijiazhuang 050018, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang Bao-Zhu,Wang Xiao-Liang. Epitaxial growth of alingan quaternary alloys by rf-mbe[J]. Journal of inorganic materials,2009,24(3):559-562.
APA	Wang Bao-Zhu,&Wang Xiao-Liang.(2009).Epitaxial growth of alingan quaternary alloys by rf-mbe.Journal of inorganic materials,24(3),559-562.
MLA	Wang Bao-Zhu,et al."Epitaxial growth of alingan quaternary alloys by rf-mbe".Journal of inorganic materials 24.3(2009):559-562.

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