Design and fabrication of algan-based resonant-cavity-enhanced p-i-n uv pds | |
Nie, Chao1; Jiang, Ruo Lian1; Ji, Xiao Li1,2; Xie, Zi Li1; Liu, Bin1; Han, Ping1; Zhang, Rong1; Zheng, You Dou1 | |
刊名 | Ieee journal of quantum electronics |
2009-05-01 | |
卷号 | 45期号:5-6页码:575-578 |
关键词 | Algan Distributed bragg reflector (dbr) Resonant-cavity-enhanced (rce) Transfer-matrix-approach (tma) Ultraviolet (uv) photodetector (pd) |
ISSN号 | 0018-9197 |
DOI | 10.1109/jqe.2009.2013146 |
通讯作者 | Nie, chao(nchbbc@gmail.com) |
英文摘要 | Algan-based resonant-cavity-enhanced (rce) p-i-n photodetectors (pds) for operating at the wavelength of 330 nm were designed and fabricated. a 20.5-pair aln/al(0.3)ga(0.7)n distributed bragg reflector (dbr) was used as the back mirror and a 3-pair aln/al(0.3)ga(0.7)n dbr as the front one. in the cavity is a p-gan/i-gan/n-al(0.3)ga(0.7)n structure. the optical absorption of the rce pd structure is at most 59.8% deduced from reflectance measurement. selectively enhanced by the cavity effect, a response peak of 0.128 a/w at 330 nm with a half-peak breadth of 5.5 nm was obtained under zero bias. the peak wavelength shifted 15 nm with the incident angle of light increasing from 0 degrees to 60 degrees. |
WOS关键词 | RCE PHOTODETECTORS ; PHOTODIODES |
WOS研究方向 | Engineering ; Optics ; Physics |
WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
语种 | 英语 |
出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
WOS记录号 | WOS:000266454300018 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427526 |
专题 | 半导体研究所 |
通讯作者 | Nie, Chao |
作者单位 | 1.Nanjing Univ, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Nie, Chao,Jiang, Ruo Lian,Ji, Xiao Li,et al. Design and fabrication of algan-based resonant-cavity-enhanced p-i-n uv pds[J]. Ieee journal of quantum electronics,2009,45(5-6):575-578. |
APA | Nie, Chao.,Jiang, Ruo Lian.,Ji, Xiao Li.,Xie, Zi Li.,Liu, Bin.,...&Zheng, You Dou.(2009).Design and fabrication of algan-based resonant-cavity-enhanced p-i-n uv pds.Ieee journal of quantum electronics,45(5-6),575-578. |
MLA | Nie, Chao,et al."Design and fabrication of algan-based resonant-cavity-enhanced p-i-n uv pds".Ieee journal of quantum electronics 45.5-6(2009):575-578. |
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