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	Multiple valley couplings in nanometer si metal-oxide-semiconductor field-effect transistors
	Deng, Hui-Xiong1; Jiang, Xiang-Wei1; Luo, Jun-Wei1; Li, Shu-Shen1; Xia, Jian-Bai1; Wang, Lin-Wang2
刊名	Journal of applied physics
	2008-06-15
卷号	103期号:12页码:5
ISSN号	0021-8979
DOI	10.1063/1.2943277
通讯作者	Deng, hui-xiong()
英文摘要	We investigate the couplings between different energy band valleys in a metal-oxide-semiconductor field-effect transistor (mosfet) device using self-consistent calculations of million-atom schrodinger-poisson equations. atomistic empirical pseudopotentials are used to describe the device hamiltonian and the underlying bulk band structure. the mosfet device is under nonequilibrium condition with a source-drain bias up to 2 v and a gate potential close to the threshold potential. we find that all the intervalley couplings are small, with the coupling constants less than 3 mev. as a result, the system eigenstates derived from different bulk valleys can be calculated separately. this will significantly reduce the simulation time because the diagonalization of the hamiltonian matrix scales as the third power of the total number of basis functions. (c) 2008 american institute of physics.
WOS关键词	SIMULATION ; MOSFETS ; SUPERLATTICES ; REGIME ; LIMIT
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000257284100110
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427209
专题	半导体研究所
通讯作者	Deng, Hui-Xiong
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Lawrence Berkeley Natl Lab, Computat Res Div, Berkeley, CA 94720 USA
推荐引用方式 GB/T 7714	Deng, Hui-Xiong,Jiang, Xiang-Wei,Luo, Jun-Wei,et al. Multiple valley couplings in nanometer si metal-oxide-semiconductor field-effect transistors[J]. Journal of applied physics,2008,103(12):5.
APA	Deng, Hui-Xiong,Jiang, Xiang-Wei,Luo, Jun-Wei,Li, Shu-Shen,Xia, Jian-Bai,&Wang, Lin-Wang.(2008).Multiple valley couplings in nanometer si metal-oxide-semiconductor field-effect transistors.Journal of applied physics,103(12),5.
MLA	Deng, Hui-Xiong,et al."Multiple valley couplings in nanometer si metal-oxide-semiconductor field-effect transistors".Journal of applied physics 103.12(2008):5.

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