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	Mn-including inas quantum dots fabricated by mn implantation
	Hu, L. J.; Chen, Y. H.; Ye, X. L.; Jiao, Y. H.; Shi, L. W.; Wang, Z. G.
刊名	Physica e-low-dimensional systems & nanostructures
	2008-08-01
卷号	40期号:9页码:2869-2873
关键词	Mn-including Inas quantum dots Pl Magnetic
ISSN号	1386-9477
DOI	10.1016/j.physe.2008.01.016
通讯作者	Chen, y. h.(yhchen@semi.ac.cn)
英文摘要	Mn-including inas quantum dots (qds) were fabricated by mn-ion implantation and subsequent annealing. the optical, compositional, and structural properties of the treated samples were analyzed by photoluminescence (pl) and microscopy. energy dispersive x-ray (edx) results indicate that mn ions diffused from the bulk gaas into the inas qds during annealing, and the diffusion appears to be driven by the strain in the inas qds. the temperature dependence of the pl of mn-including inas qd samples exhibits qds pl characteristics. at the same time, the heavy mn-including inas qd samples have ferromagnetic properties and high t(c). (c) 2008 elsevier b.v. all rights reserved.
WOS关键词	III-V SEMICONDUCTORS ; GAAS ; GA1-XMNXAS ; GROWTH
WOS研究方向	Science & Technology - Other Topics ; Physics
WOS类目	Nanoscience & Nanotechnology ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000257626100005
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427178
专题	半导体研究所
通讯作者	Chen, Y. H.
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Hu, L. J.,Chen, Y. H.,Ye, X. L.,et al. Mn-including inas quantum dots fabricated by mn implantation[J]. Physica e-low-dimensional systems & nanostructures,2008,40(9):2869-2873.
APA	Hu, L. J.,Chen, Y. H.,Ye, X. L.,Jiao, Y. H.,Shi, L. W.,&Wang, Z. G..(2008).Mn-including inas quantum dots fabricated by mn implantation.Physica e-low-dimensional systems & nanostructures,40(9),2869-2873.
MLA	Hu, L. J.,et al."Mn-including inas quantum dots fabricated by mn implantation".Physica e-low-dimensional systems & nanostructures 40.9(2008):2869-2873.

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