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	Investigation of optical quenching of photoconductivity in high-resistivity gan epilayer
	Fang, Cebao; Wang, Xiaoliang; Xiao, Hongling; Hu, Guoxin; Wang, Cuimei; Wang, Xiaoyan; Li, Jianping; Wang, Junxi; Li, Chengji; Zeng, Yiping
刊名	Journal of crystal growth
	2007
卷号	298页码:800-803
关键词	Deep defect Optical quenching Mocvd Gan
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2006.10.218
通讯作者	Wang, xiaoliang(xlwang@red.semi.ac.cn)
英文摘要	In undoped high-resistivity gan epilayers grown by metalorganic chemical vapor deposition (mocvd) on sapphire, deep levels are investigated by persistent photoconductivity (ppc) and optical quenching (oq) of photoconductivity (pc) measurements. the ppc and oq are studied by exciting the samples with two beams of radiation of various wavelengths and intensities. when the light wavelengths of 300 and 340 nm radiate the gan epilayer, the photocurrent without any quenching effect is rapidly increased because the band gap transition only occurs. if the background light is 340 nm and the quenching light is 564 or 828 nm, the quenching of a small photocurrent generates but clearly. two broad quenching bands that extend from 385 to 716 nm and from 723 to 1000 nm with a maximum at approximately 2.2 ev (566 nm) is observed. these quenching bands are attributed to hole trap level's existence in the gan epilayer. we point out that the origin of the defects responsible for the optical quenching can be attributed to nitrogen antisite and/or gallium vacancy. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词	N-TYPE GAN ; GAAS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000244622600186
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427111
专题	半导体研究所
通讯作者	Wang, Xiaoliang
作者单位	Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Fang, Cebao,Wang, Xiaoliang,Xiao, Hongling,et al. Investigation of optical quenching of photoconductivity in high-resistivity gan epilayer[J]. Journal of crystal growth,2007,298:800-803.
APA	Fang, Cebao.,Wang, Xiaoliang.,Xiao, Hongling.,Hu, Guoxin.,Wang, Cuimei.,...&Wang, Zanguo.(2007).Investigation of optical quenching of photoconductivity in high-resistivity gan epilayer.Journal of crystal growth,298,800-803.
MLA	Fang, Cebao,et al."Investigation of optical quenching of photoconductivity in high-resistivity gan epilayer".Journal of crystal growth 298(2007):800-803.

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