Effect of substrate misorientation on the inas/inalas/inp nanostructure morphology and lateral composition modulation in the inalas matrix | |
Lei, W.; Wang, Y. L.; Chen, Y. H.; Jin, P.; Ye, X. L.; Xu, B.; Wang, Z. G. | |
刊名 | Applied physics letters
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2007-03-05 | |
卷号 | 90期号:10页码:3 |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.2711778 |
通讯作者 | Lei, w.(wen.lei@uni-due.de) |
英文摘要 | The authors report the self-organized growth of inas/inalas quantum wires on nominal (001) inp substrate and (001) inp substrates misoriented by 2 degrees, 4 degrees, and 8 degrees towards both [-110] and [110]. the influence of substrate misorientation on the structural and optical properties of these inas/inalas quantum wires is studied by transmission electron microscopy and photoluminescence measurements. compared with that grown on nominal (001) inp substrate, the density of inas/inalas quantum wires grown on misoriented inp(001) substrates is enhanced. a strong lateral composition modulation effect take place in the inalas buffer layers grown on misoriented inp substrates with large off-cut angles (4 degrees and 8 degrees), which induces a nucleation template for the first-period inas quantum wires and greatly improve the size distribution of inas quantum wires. inas/inalas quantum wires grown on inp (001) substrate 8 degrees off cut towards [-110] show the best size homogeneity and photoluminescence intensity. (c) 2007 american institute of physics. |
WOS关键词 | INAS QUANTUM DOTS ; SELF-ORGANIZATION ; ISLANDS ; GROWTH ; INALAS/INP(001) ; GAAS(100) ; INP(001) |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000244791700096 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427078 |
专题 | 半导体研究所 |
通讯作者 | Lei, W. |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Univ Duisburg Gesamthsch, Dept Phys, D-47048 Duisburg, Germany |
推荐引用方式 GB/T 7714 | Lei, W.,Wang, Y. L.,Chen, Y. H.,et al. Effect of substrate misorientation on the inas/inalas/inp nanostructure morphology and lateral composition modulation in the inalas matrix[J]. Applied physics letters,2007,90(10):3. |
APA | Lei, W..,Wang, Y. L..,Chen, Y. H..,Jin, P..,Ye, X. L..,...&Wang, Z. G..(2007).Effect of substrate misorientation on the inas/inalas/inp nanostructure morphology and lateral composition modulation in the inalas matrix.Applied physics letters,90(10),3. |
MLA | Lei, W.,et al."Effect of substrate misorientation on the inas/inalas/inp nanostructure morphology and lateral composition modulation in the inalas matrix".Applied physics letters 90.10(2007):3. |
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