| A base-emitter self-aligned multi-finger si1-xgex/si power heterojunction bipolar transistor | |
| Xue Chun-Lai; Yao Fei; Shi Wen-Hua; Cheng Bu-Wen; Wang Hong-Jie; Yu Jin-Zhong; Wang Qi-Ming | |
| 刊名 | Chinese physics letters
 |
| 2007-07-01 | |
| 卷号 | 24期号:7页码:2125-2127 |
| ISSN号 | 0256-307X |
| 通讯作者 | Xue chun-lai(clxue@semi.ac.cn) |
| 英文摘要 | With a crystal orientation dependent on the etch rate of si in koh-based solution, a base-emitter self-aligned large-area multi-linger configuration power sige heterojunction bipolar transistor (hbt) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. the maximum dc current gain is 226.1. the collector-emitter junction breakdown voltage bvceo is 10 v and the collector-base junction breakdown voltage bvcbo is 16 v with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. the device exhibited a maximum oscillation frequency f(max) of 35.5 ghz and a cut-off frequency f(t) of 24.9 ghz at a dc bias point of i-c = 70 ma and the voltage between collector and emitter is v-ce = 3 v. load pull measurements in class-a operation of the sige hbt are performed at 1.9 ghz with input power ranging from 0 dbm to 21 dbm. a maximum output power of 29.9 dbm (about 977 mw) is obtained at an input power of 18.5 dbm with a gain of 11.47 db. compared to a non-self-aligned sige hbt with the same heterostructure and process, f(max) and f(t) are improved by about 83.9% and 38.3%, respectively. |
| WOS关键词 | MOBILE COMMUNICATION ; HBTS ; SILICON |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000247577900094 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2427059 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue Chun-Lai |
| 作者单位 | Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue Chun-Lai,Yao Fei,Shi Wen-Hua,et al. A base-emitter self-aligned multi-finger si1-xgex/si power heterojunction bipolar transistor[J]. Chinese physics letters,2007,24(7):2125-2127. |
| APA | Xue Chun-Lai.,Yao Fei.,Shi Wen-Hua.,Cheng Bu-Wen.,Wang Hong-Jie.,...&Wang Qi-Ming.(2007).A base-emitter self-aligned multi-finger si1-xgex/si power heterojunction bipolar transistor.Chinese physics letters,24(7),2125-2127. |
| MLA | Xue Chun-Lai,et al."A base-emitter self-aligned multi-finger si1-xgex/si power heterojunction bipolar transistor".Chinese physics letters 24.7(2007):2125-2127. |
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