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Study on mechanical properties of gan epitaxy films grown on sapphire by mocvd
Wei Tongbo; Wang Junxi; Li Jinmin; Liu Zhe; Duan Ruifei
刊名Rare metal materials and engineering
2007-03-01
卷号36期号:3页码:416-419
关键词Gan Mocvd Morphology Mechanical properties
ISSN号1002-185X
通讯作者Wei tongbo(tbwei@mail.semi.ac.cn)
英文摘要Gan epitaxy films were grown on (0001) oriented sapphire substrate by metal-organic vapor deposition(mocvd). afm and sem were used to analyze the surface morphology of gan films. hardness and critical load of gan films were measured by an nano-indentation tester, friction coefficient by reciprocating umt-2mt tribometer. it is found that the surface of gan film is smooth and the epitaxial growth mechanism is in two-dimension mode, gan epitaxy films also belong to ultra-hardness materials, whose hardness is 22.1 mpa and elastic modulus is 299.5 gpa. adhesion strength of epitaxial gan to sapphire is high, and critical load reaches 1.6 n. friction coefficient against gcr15 ball is steadily close to 0.13, while gan films turns to be broken rapidly by using si3n4 ceramic ball as counterpart.
WOS关键词DIODES
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种英语
出版者NORTHWEST INST NONFERROUS METAL RESEARCH
WOS记录号WOS:000245734700011
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2427043
专题半导体研究所
通讯作者Wei Tongbo
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Wei Tongbo,Wang Junxi,Li Jinmin,et al. Study on mechanical properties of gan epitaxy films grown on sapphire by mocvd[J]. Rare metal materials and engineering,2007,36(3):416-419.
APA Wei Tongbo,Wang Junxi,Li Jinmin,Liu Zhe,&Duan Ruifei.(2007).Study on mechanical properties of gan epitaxy films grown on sapphire by mocvd.Rare metal materials and engineering,36(3),416-419.
MLA Wei Tongbo,et al."Study on mechanical properties of gan epitaxy films grown on sapphire by mocvd".Rare metal materials and engineering 36.3(2007):416-419.
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