Study on mechanical properties of gan epitaxy films grown on sapphire by mocvd | |
Wei Tongbo; Wang Junxi; Li Jinmin; Liu Zhe; Duan Ruifei | |
刊名 | Rare metal materials and engineering |
2007-03-01 | |
卷号 | 36期号:3页码:416-419 |
关键词 | Gan Mocvd Morphology Mechanical properties |
ISSN号 | 1002-185X |
通讯作者 | Wei tongbo(tbwei@mail.semi.ac.cn) |
英文摘要 | Gan epitaxy films were grown on (0001) oriented sapphire substrate by metal-organic vapor deposition(mocvd). afm and sem were used to analyze the surface morphology of gan films. hardness and critical load of gan films were measured by an nano-indentation tester, friction coefficient by reciprocating umt-2mt tribometer. it is found that the surface of gan film is smooth and the epitaxial growth mechanism is in two-dimension mode, gan epitaxy films also belong to ultra-hardness materials, whose hardness is 22.1 mpa and elastic modulus is 299.5 gpa. adhesion strength of epitaxial gan to sapphire is high, and critical load reaches 1.6 n. friction coefficient against gcr15 ball is steadily close to 0.13, while gan films turns to be broken rapidly by using si3n4 ceramic ball as counterpart. |
WOS关键词 | DIODES |
WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
语种 | 英语 |
出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
WOS记录号 | WOS:000245734700011 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427043 |
专题 | 半导体研究所 |
通讯作者 | Wei Tongbo |
作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Wei Tongbo,Wang Junxi,Li Jinmin,et al. Study on mechanical properties of gan epitaxy films grown on sapphire by mocvd[J]. Rare metal materials and engineering,2007,36(3):416-419. |
APA | Wei Tongbo,Wang Junxi,Li Jinmin,Liu Zhe,&Duan Ruifei.(2007).Study on mechanical properties of gan epitaxy films grown on sapphire by mocvd.Rare metal materials and engineering,36(3),416-419. |
MLA | Wei Tongbo,et al."Study on mechanical properties of gan epitaxy films grown on sapphire by mocvd".Rare metal materials and engineering 36.3(2007):416-419. |
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