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	Spatial distribution of deep level defects in crack-free algan grown on gan with a high-temperature aln interlayer
	Sun, Q.; Wang, H.; Jiang, D. S.; Jin, R. Q.; Huang, Y.; Zhang, S. M.; Yang, H.; Jahn, U.; Ploog, K. H.
刊名	Journal of applied physics
	2006-12-15
卷号	100期号:12页码:5
ISSN号	0021-8979
DOI	10.1063/1.2402964
通讯作者	Sun, q.(qsun@red.semi.ac.cn)
英文摘要	The deep level luminescence of crack-free al0.25ga0.75n layers grown on a gan template with a high-temperature grown aln interlayer has been studied using spatially resolved cathodoluminescence (cl) spectroscopy. the cl spectra of al0.25ga0.75n grown on a thin aln interlayer present a deep level aquamarine luminescence (dlal) band at about 2.6 ev and a deep level violet luminescence (dlvl) band at about 3.17 ev. cross-section line scan cl measurements on a cleaved sample edge clearly reveal different distributions of dlal-related and dlvl-related defects in algan along the growth direction. the dlal band of algan is attributed to evolve from the yellow luminescence band of gan, and therefore has an analogous origin of a radiative transition between a shallow donor and a deep acceptor. the dlvl band is correlated with defects distributed near the gan/aln/algan interfaces. additionally, the lateral distribution of the intensity of the dlal band shows a domainlike feature which is accompanied by a lateral phase separation of al composition. such a distribution of deep level defects is probably caused by the strain field within the domains. (c) 2006 american institute of physics.
WOS关键词	LIGHT-EMITTING-DIODES ; ALLOYS ; LUMINESCENCE ; GENERATION ; FILMS ; NM
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000243157900001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426833
专题	半导体研究所
通讯作者	Sun, Q.
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
推荐引用方式 GB/T 7714	Sun, Q.,Wang, H.,Jiang, D. S.,et al. Spatial distribution of deep level defects in crack-free algan grown on gan with a high-temperature aln interlayer[J]. Journal of applied physics,2006,100(12):5.
APA	Sun, Q..,Wang, H..,Jiang, D. S..,Jin, R. Q..,Huang, Y..,...&Ploog, K. H..(2006).Spatial distribution of deep level defects in crack-free algan grown on gan with a high-temperature aln interlayer.Journal of applied physics,100(12),5.
MLA	Sun, Q.,et al."Spatial distribution of deep level defects in crack-free algan grown on gan with a high-temperature aln interlayer".Journal of applied physics 100.12(2006):5.

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