| Shrinkage of nanocavities in silicon during electron beam irradiation | |
| Zhu, Xianfang | |
| 刊名 | Journal of applied physics
 |
| 2006-08-01 | |
| 卷号 | 100期号:3页码:4 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2234553 |
| 通讯作者 | Zhu, xianfang(xianfangzhu@hotmail.com) |
| 英文摘要 | An internal shrinkage of nanocavity in silicon was in situ observed under irradiation of energetic electron on electron transmission microscopy. because there is no addition of any external materials to cavity site, a predicted nanosize effect on the shrinkage was observed. at the same time, because there is no ion cascade effect as encountered in the previous ion irradiation-induced nanocavity shrinkage experiment, the electron irradiation-induced instability of nanocavity also provides a further more convincing evidence to demonstrate the predicted irradiation-induced athermal activation effect. (c) 2006 american institute of physics. |
| WOS关键词 | PREFERENTIAL AMORPHIZATION ; ION IRRADIATION ; AMORPHOUS SI ; IN-SITU ; VOIDS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000239764100083 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2426800 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu, Xianfang |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Lab Low Dimens Nanostruct, Xiamen 316005, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA |
| 推荐引用方式 GB/T 7714 | Zhu, Xianfang. Shrinkage of nanocavities in silicon during electron beam irradiation[J]. Journal of applied physics,2006,100(3):4. |
| APA | Zhu, Xianfang.(2006).Shrinkage of nanocavities in silicon during electron beam irradiation.Journal of applied physics,100(3),4. |
| MLA | Zhu, Xianfang."Shrinkage of nanocavities in silicon during electron beam irradiation".Journal of applied physics 100.3(2006):4. |
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