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	Molecular beam epitaxy inas dot arrays on ingaas/gaas
	Jiao, Y. H.; Wu, J.; Xu, B.; Jin, P.; Hu, L. J.; Liang, L. Y.; Ren, Y. Y.; Wang, Z. G.
刊名	Nanotechnology
	2006-12-14
卷号	17期号:23页码:5846-5850
ISSN号	0957-4484
DOI	10.1088/0957-4484/17/23/022
通讯作者	Jiao, y. h.()
英文摘要	Periodical alignment of the inas dots along the < 100 > and < 110 > directions was observed on an elastically relaxed ingaas buffer layer grown at 500 and 450 degrees c, respectively, on the vicinal gaas(001) substrate. due to alignment along these directions, the inas dots were arranged into a quasi-two-dimensional hexagonal lattice. such a periodical arrangement of inas dots may be explained in terms of modulation in strain as well as composition along [110] as observed by using cross-sectional transmission electron microscopy.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; FIELD-EFFECT TRANSISTORS ; QUANTUM-DOTS ; SELF-ORGANIZATION ; ISLANDS ; NANOSTRUCTURES ; SUPERLATTICES ; GROWTH ; SURFACE ; GAAS(100)
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000242598200022
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426756
专题	半导体研究所
通讯作者	Jiao, Y. H.
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Jiao, Y. H.,Wu, J.,Xu, B.,et al. Molecular beam epitaxy inas dot arrays on ingaas/gaas[J]. Nanotechnology,2006,17(23):5846-5850.
APA	Jiao, Y. H..,Wu, J..,Xu, B..,Jin, P..,Hu, L. J..,...&Wang, Z. G..(2006).Molecular beam epitaxy inas dot arrays on ingaas/gaas.Nanotechnology,17(23),5846-5850.
MLA	Jiao, Y. H.,et al."Molecular beam epitaxy inas dot arrays on ingaas/gaas".Nanotechnology 17.23(2006):5846-5850.

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