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	High uniformity of self-organized inas quantum wires on inalas buffers grown on misoriented inp(001)
	Wang, YL; Jin, P; Ye, XL; Zhang, CL; Shi, GX; Li, RY; Chen, YH; Wang, ZG
刊名	Applied physics letters
	2006-03-20
卷号	88期号:12页码:3
ISSN号	0003-6951
DOI	10.1063/1.2188040
通讯作者	Wang, yl(wangyli@red.semi.ac.cn)
英文摘要	Highly uniform inas quantum wires (qwrs) have been obtained on the in0.5al0.5as buffer layer grown on the inp substrate 8 degrees off (001) towards (111) by molecular-beam epitaxy. the quasi-periodic composition modulation was spontaneously formed in the in0.5al0.5as buffer layer on this misoriented inp (001). the width and period of the in-rich bands are about 10 and 40 nm, respectively. the periodic in-rich bands play a major role in the sequent inas qwrs growth and the inas qwrs are well positioned atop in-rich bands. the photoluminescence (pl) measurements showed a significant reduction in full width at half maximum and enhanced pl efficiency for inas qwrs on misoriented inp(001) as compared to that on normal inp(001). (c) 2006 american institute of physics.
WOS关键词	NANOWIRES ; THRESHOLD ; WELLS ; INP
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000236250100099
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426602
专题	半导体研究所
通讯作者	Wang, YL
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang, YL,Jin, P,Ye, XL,et al. High uniformity of self-organized inas quantum wires on inalas buffers grown on misoriented inp(001)[J]. Applied physics letters,2006,88(12):3.
APA	Wang, YL.,Jin, P.,Ye, XL.,Zhang, CL.,Shi, GX.,...&Wang, ZG.(2006).High uniformity of self-organized inas quantum wires on inalas buffers grown on misoriented inp(001).Applied physics letters,88(12),3.
MLA	Wang, YL,et al."High uniformity of self-organized inas quantum wires on inalas buffers grown on misoriented inp(001)".Applied physics letters 88.12(2006):3.

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