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	Semiconductor-metal transition in insb nanowires and nanofilms under external electric field
	Zhang, X. W.; Li, S. S.; Xia, J. B.
刊名	Applied physics letters
	2006-10-23
卷号	89期号:17页码:3
ISSN号	0003-6951
DOI	10.1063/1.2370273
通讯作者	Zhang, x. w.(zhxw99@semi.ac.cn)
英文摘要	The electronic structures, rashba spin-orbit couplings, and transport properties of insb nanowires and nanofilms are investigated theoretically. when both the radius of the wire (or the thickness of the film) and the electric field are large, the electron bands and hole bands overlap, and the fermi level crosses with some bands, which means that the semiconductors transit into metals. meanwhile, the rashba coefficients behave in an abnormal way. the conductivities increase dramatically when the electric field is larger than a critical value. this semiconductor-metal transition is observable at the room temperature. (c) 2006 american institute of physics.
WOS关键词	CONDUCTING NANOWIRES ; TRANSISTOR
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000241585800061
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426592
专题	半导体研究所
通讯作者	Zhang, X. W.
作者单位	1.China Ctr Adv Sci & Technol, World Lab, Beijing 100080, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhang, X. W.,Li, S. S.,Xia, J. B.. Semiconductor-metal transition in insb nanowires and nanofilms under external electric field[J]. Applied physics letters,2006,89(17):3.
APA	Zhang, X. W.,Li, S. S.,&Xia, J. B..(2006).Semiconductor-metal transition in insb nanowires and nanofilms under external electric field.Applied physics letters,89(17),3.
MLA	Zhang, X. W.,et al."Semiconductor-metal transition in insb nanowires and nanofilms under external electric field".Applied physics letters 89.17(2006):3.

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