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	Ferromagnetism in mn and cr doped gan by thermal diffusion
	Cai, XM; Djurisic, AB; Xie, MH; Liu, H; Zhang, XX; Zhu, JJ; Yang, H
刊名	Materials science and engineering b-solid state materials for advanced technology
	2005-03-25
卷号	117期号:3页码:292-295
关键词	Gan Mn Cr Thermal doping Ferromagnetism
ISSN号	0921-5107
DOI	10.1016/j.mseb.2004.12.008
通讯作者	Cai, xm(caixm@hkusua.hku.hk)
英文摘要	Doping of magnetic element mn and cr in gan was achieved by thermal diffusion. the conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. x-ray diffraction measurements revealed no secondary phase in the samples. experiments using superconducting quantum interference device (squid) showed that the samples were ferromagnetic at 5 and 300 k, implying the curie temperature to be around or over 300 k, despite their n-type conductivity. (c) 2004 elsevier b.v. all rights reserved.
WOS关键词	MOLECULAR-BEAM-EPITAXY ; DILUTED MAGNETIC SEMICONDUCTOR ; III-V SEMICONDUCTORS ; P-TYPE GAN ; ROOM-TEMPERATURE ; OPTICAL-PROPERTIES ; SINGLE-CRYSTALS ; (GA,MN)N FILMS ; N-GAN ; GAMNN
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000227770300013
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426483
专题	半导体研究所
通讯作者	Cai, XM
作者单位	1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Cai, XM,Djurisic, AB,Xie, MH,et al. Ferromagnetism in mn and cr doped gan by thermal diffusion[J]. Materials science and engineering b-solid state materials for advanced technology,2005,117(3):292-295.
APA	Cai, XM.,Djurisic, AB.,Xie, MH.,Liu, H.,Zhang, XX.,...&Yang, H.(2005).Ferromagnetism in mn and cr doped gan by thermal diffusion.Materials science and engineering b-solid state materials for advanced technology,117(3),292-295.
MLA	Cai, XM,et al."Ferromagnetism in mn and cr doped gan by thermal diffusion".Materials science and engineering b-solid state materials for advanced technology 117.3(2005):292-295.

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