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	Nanocavity shrinkage and preferential amorphization during irradiation in silicon
	Zhu, XF; Wang, ZG
刊名	Chinese physics letters
	2005-03-01
卷号	22期号:3页码:657-660
ISSN号	0256-307X
通讯作者	Zhu, xf(xianfangzhu@hotmail.com)
英文摘要	We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation. the results reveal novel thermodynamic nonequilibrium properties of such an open-volume nanostructure in condensed matter and also of covalently bound amorphous materials both at nanosize scale and during ultrafast interaction with energetic beam.
WOS关键词	AMORPHOUS-SILICON ; ION IRRADIATION ; INSTABILITY ; FLOW ; SI
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000227711200038
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426443
专题	半导体研究所
通讯作者	Zhu, XF
作者单位	1.Xiamen Univ, Dept Phys, Lab Low Dimens Nanostruct, Xiamen 361005, Peoples R China 2.Xiamen Univ, Nanomat Ctr, Lab Low Dimens Nanostruct, Xiamen 361005, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 4.Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
推荐引用方式 GB/T 7714	Zhu, XF,Wang, ZG. Nanocavity shrinkage and preferential amorphization during irradiation in silicon[J]. Chinese physics letters,2005,22(3):657-660.
APA	Zhu, XF,&Wang, ZG.(2005).Nanocavity shrinkage and preferential amorphization during irradiation in silicon.Chinese physics letters,22(3),657-660.
MLA	Zhu, XF,et al."Nanocavity shrinkage and preferential amorphization during irradiation in silicon".Chinese physics letters 22.3(2005):657-660.

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