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	Transverse magnetic field effect on the current hysteresis of doped gaas/alas superlattice
	Sun, BQ; Wang, JN; Jiang, DS
刊名	Semiconductor science and technology
	2005-09-01
卷号	20期号:9页码:947-951
ISSN号	0268-1242
DOI	10.1088/0268-1242/20/9/010
通讯作者	Sun, bq(bqsun@red.semi.ac.cn)
英文摘要	The influence of a transverse magnetic field up to 13 t at 1.6 k on the current-voltage, i (v), characteristics of a doped gaas/alas superlattice was investigated. current hysteresis was observed in the domain formation regions of the i (v) at zero magnetic field while applied bias was swept in both up (0-6 v) and down (6-0 v) directions. the magnitude of current hysteresis was reduced and finally disappeared with increasing transverse magnetic field. the effect is explained as the modification of the current density versus electric field characteristic by transverse magnetic fields. calculated results based on the tunnelling current formula in a superlattice support our interpretation.
WOS关键词	CURRENT SELF-OSCILLATION ; GAAS-ALAS SUPERLATTICES ; MULTIPLE-QUANTUM WELLS ; SEMICONDUCTOR SUPERLATTICES ; BISTABILITY ; DOMAIN
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000232176800012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426410
专题	半导体研究所
通讯作者	Sun, BQ
作者单位	1.Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Sun, BQ,Wang, JN,Jiang, DS. Transverse magnetic field effect on the current hysteresis of doped gaas/alas superlattice[J]. Semiconductor science and technology,2005,20(9):947-951.
APA	Sun, BQ,Wang, JN,&Jiang, DS.(2005).Transverse magnetic field effect on the current hysteresis of doped gaas/alas superlattice.Semiconductor science and technology,20(9),947-951.
MLA	Sun, BQ,et al."Transverse magnetic field effect on the current hysteresis of doped gaas/alas superlattice".Semiconductor science and technology 20.9(2005):947-951.

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