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	Laser diode integrated with a dual-waveguide spot-size converter by low-energy ion implantation quantum well intermixing
	Hou, LP; Zhu, HL; Zhou, F; Wang, LF; Bian, J; Wang, W
刊名	Chinese physics letters
	2005-07-01
卷号	22期号:7页码:1684-1686
ISSN号	0256-307X
通讯作者	Hou, lp(houlp@red.semi.ac.cn)
英文摘要	A ridge laser diode monolithically integrated with a buried-ridge-structure dual-waveguide spot-size converter operating at 1.58 mu m is successfully fabricated by means of low-energy ion implantation quantum well intermixing and asymmetric twin waveguide technology. the passive waveguide is optically combined with a laterally tapered active core to control the mode size. the devices emit in a single transverse and quasi single longitudinal mode with a side mode suppression ratio of 40.0db although no grating is fabricated in the ld region. the threshold current is 50 ma. the beam divergence angles in the horizontal and vertical directions are as small as 7.3 degrees x 18.0 degrees, respectively, resulting in 3.0db coupling loss with a cleaved single-mode optical fibre.
WOS关键词	MONOLITHIC INTEGRATION ; STEP
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000230529000034
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426396
专题	半导体研究所
通讯作者	Hou, LP
作者单位	Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Hou, LP,Zhu, HL,Zhou, F,et al. Laser diode integrated with a dual-waveguide spot-size converter by low-energy ion implantation quantum well intermixing[J]. Chinese physics letters,2005,22(7):1684-1686.
APA	Hou, LP,Zhu, HL,Zhou, F,Wang, LF,Bian, J,&Wang, W.(2005).Laser diode integrated with a dual-waveguide spot-size converter by low-energy ion implantation quantum well intermixing.Chinese physics letters,22(7),1684-1686.
MLA	Hou, LP,et al."Laser diode integrated with a dual-waveguide spot-size converter by low-energy ion implantation quantum well intermixing".Chinese physics letters 22.7(2005):1684-1686.

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