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	Gaas-based room-temperature continuous-wave 1.59 mu m gainnassb single-quantum-well laser diode grown by molecular-beam epitaxy
	Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; Zhao, H; Peng, HL; Xu, YQ; Li, SY; He, ZH; Ren, ZW
刊名	Applied physics letters
	2005-12-05
卷号	87期号:23页码:3
ISSN号	0003-6951
DOI	10.1063/1.2140614
通讯作者	Zhang, sy(zhangshiyong@tsinghua.org.cn)
英文摘要	Starting from the growth of high-quality 1.3 mu m gainnas/gaas quantum well (qw), the qw emission wavelength has been extended up to 1.55 mu m by a combination of lowering growth rate, using ganas barriers and incorporating some amount of sb. the photoluminescence properties of 1.5 mu m range gainnassb/ganas qws are quite comparable to the 1.3 mu m qws, revealing positive effect of sb on improving the optical quality of the qws. a 1.59 mu m lasing of a gainnassb/ganas single-qw laser diode is obtained under continuous current injection at room temperature. the threshold current density is 2.6 ka/cm(2) with as-cleaved facet mirrors. (c) 2005 american institute of physics.
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000233723200021
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426361
专题	半导体研究所
通讯作者	Zhang, SY
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Niu, ZC,Zhang, SY,Ni, HQ,et al. Gaas-based room-temperature continuous-wave 1.59 mu m gainnassb single-quantum-well laser diode grown by molecular-beam epitaxy[J]. Applied physics letters,2005,87(23):3.
APA	Niu, ZC.,Zhang, SY.,Ni, HQ.,Wu, DH.,Zhao, H.,...&Wu, RH.(2005).Gaas-based room-temperature continuous-wave 1.59 mu m gainnassb single-quantum-well laser diode grown by molecular-beam epitaxy.Applied physics letters,87(23),3.
MLA	Niu, ZC,et al."Gaas-based room-temperature continuous-wave 1.59 mu m gainnassb single-quantum-well laser diode grown by molecular-beam epitaxy".Applied physics letters 87.23(2005):3.

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