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	Comparative study of inas quantum dots grown on different gaas substrates by mocvd
	Liang, S; Zhu, HL; Pan, JQ; Hou, LP; Wang, W
刊名	Journal of crystal growth
	2005-09-01
卷号	282期号:3-4页码:297-304
关键词	Bimodal size distribution Low-diniensional structures Metalorganic chemical vapor deposition Self-assembled quantum dots Indium arsenide
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2005.05.029
通讯作者	Liang, s(liangsong@red.semi.ac.cn)
英文摘要	We present a comparative study of inas quantum dots grown on si-doped gaas (10 0) substrates, si-doped gaas (10 0) vicinal substrates, and semi-insulating gaas (10 0) substrates. the density and size distribution of quantum dots varied greatly with the different substrates used. while dots on exact substrates showed only one dominant size, a clear bimodal size distribution of the inas quantum dots was observed on gaas vicinal substrates, which is attributed to the reduced surface diffusion due to the presence of multiatomic steps. the emission wavelength is blueshifted during the growth of gaas cap layer with a significant narrowing of fwhm. we found that the blueshift is smaller for qds grown on gaas (10 0) vicinal substrates than that for dots on exact gaas (100) substrates. this is attributed to the energy barrier formed at the multiatomic step kinks which prohibits the migration of in adatoms during the early stage of cap layer growth. (c) 2005 elsevier b.v. all rights reserved.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; 1.3 MU-M ; SURFACE-MORPHOLOGY ; PHASE-EPITAXY ; STRAIN ; DEPENDENCE ; GAAS(100) ; EVOLUTION ; ISLANDS ; LASER
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000231429500005
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426329
专题	半导体研究所
通讯作者	Liang, S
作者单位	Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liang, S,Zhu, HL,Pan, JQ,et al. Comparative study of inas quantum dots grown on different gaas substrates by mocvd[J]. Journal of crystal growth,2005,282(3-4):297-304.
APA	Liang, S,Zhu, HL,Pan, JQ,Hou, LP,&Wang, W.(2005).Comparative study of inas quantum dots grown on different gaas substrates by mocvd.Journal of crystal growth,282(3-4),297-304.
MLA	Liang, S,et al."Comparative study of inas quantum dots grown on different gaas substrates by mocvd".Journal of crystal growth 282.3-4(2005):297-304.

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