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	Epitaxial sic grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer
	Huang, FY; Wang, XF; Sun, GS; Zhao, WS; Zeng, YP; Bian, EL
刊名	Thin solid films
	2005-07-22
卷号	484期号:1-2页码:261-264
关键词	Silicon carbide Chemical vapor deposition Epitaxy
ISSN号	0040-6090
DOI	10.1016/j.tsf.2005.01.083
通讯作者	Huang, fy(fyhuang@seu.edu.cn)
英文摘要	We report on the comparative studies of epitaxial sic films grown on silicon-on-insulator (soi) and si bulk substrates. the silicon-over-layer (sol) on the soi has been thinned down to different thicknesses, with the thinnest about 10 nm. it has been found that the full-width-at-half-maxim in the x-ray diffraction spectrum from the sic films decreases as the sol thickness decreases, indicating improved quality of the sic film. a similar trend has also been found in the raman spectrum. one of the potential explanations for the observation is strain accommodation by the ultra-thin soi substrate. (c) 2005 elsevier b.v. all rights reserved.
WOS关键词	SOI
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000230045900040
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426306
专题	半导体研究所
通讯作者	Huang, FY
作者单位	1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.STEK, Shanghai 201203, Peoples R China
推荐引用方式 GB/T 7714	Huang, FY,Wang, XF,Sun, GS,et al. Epitaxial sic grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer[J]. Thin solid films,2005,484(1-2):261-264.
APA	Huang, FY,Wang, XF,Sun, GS,Zhao, WS,Zeng, YP,&Bian, EL.(2005).Epitaxial sic grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer.Thin solid films,484(1-2),261-264.
MLA	Huang, FY,et al."Epitaxial sic grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer".Thin solid films 484.1-2(2005):261-264.

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