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	1.55 mu m gainnas resonant-cavity-enhanced photodetector grown on gaas
	Han, Q; Yang, XH; Niu, ZC; Ni, HQ; Xu, YQ; Zhang, SY; Du, Y; Peng, LH; Zhao, H; Tong, CZ
刊名	Applied physics letters
	2005-09-12
卷号	87期号:11页码:3
ISSN号	0003-6951
DOI	10.1063/1.2048858
通讯作者	Han, q(hanqin@red.semi.ac.cn)
英文摘要	We report the design, growth, fabrication, and characterization of a gaas-based resonant-cavity-enhanced (rce) gainnas photodetector operating at 1.55 mu m. the structure of the device was designed using a transfer-matrix method (tmm). by optimizing the molecular-beam epitaxy growth conditions, six gainnas quantum wells were used as the absorption layers. twenty-five (25)- and 9-pair gaas/alas-distributed bragg reflectors were grown as the bottom and top mirrors. at 1.55 mu m, a quantum efficiency of 33% with a full width at half maximum of 10 nm was obtained. the dark current density was 3x10(-7) a/cm(2) at a bias of 0 v and 4.3x10(-5) a/cm(2) at a reverse bias of 5 v. the primary time response measurement shows that the device has a rise time of less than 800 ps. (c) 2005 american institute of physics.
WOS关键词	QUANTUM-WELL LASERS ; BEAM EPITAXY ; DIODES ; PERFORMANCE ; RANGE
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000231802200005
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426277
专题	半导体研究所
通讯作者	Han, Q
作者单位	Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Han, Q,Yang, XH,Niu, ZC,et al. 1.55 mu m gainnas resonant-cavity-enhanced photodetector grown on gaas[J]. Applied physics letters,2005,87(11):3.
APA	Han, Q.,Yang, XH.,Niu, ZC.,Ni, HQ.,Xu, YQ.,...&Wang, QM.(2005).1.55 mu m gainnas resonant-cavity-enhanced photodetector grown on gaas.Applied physics letters,87(11),3.
MLA	Han, Q,et al."1.55 mu m gainnas resonant-cavity-enhanced photodetector grown on gaas".Applied physics letters 87.11(2005):3.

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