| Crack-free inalgan quaternary alloy films grown on si(111) substrate by metalorganic chemical vapor deposition | |
| Wu, JJ; Li, DB; Lu, Y; Han, XX; Li, JM; Wei, HY; Kang, TT; Wang, XH; Liu, XL; Zhu, QS | |
| 刊名 | Journal of crystal growth
 |
| 2004-12-17 | |
| 卷号 | 273期号:1-2页码:79-85 |
| 关键词 | Cracks Si(111) substrate Stresses Metalorganic chemical vapor deposition Gan Inalgan |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.07.092 |
| 通讯作者 | Wu, jj(jiejunw@red.semi.ac.cn) |
| 英文摘要 | Crack-free in0.08al0.25ga0.67n quaternary films, with and without thick (> 1.5 mum) high-temperature-gan (htgan) interlayer, have been grown on si(1 1 1) substrates by a low-pressure metalorganic chemical vapor deposition (mocvd) system. mole fractions of in and al in quaternary alloy layers are determined by energy dispersive spectroscopy (eds) and rutherford backscattering spectrometry (rbs), which are recorded as similar to8% and similar to25-27%, respectively. high-resolution x-ray diffraction (hrxrd) and room temperature photoluminescence (rt-pl) results evidence the film's single crystal structure and the existence of local in- and/or al-rich regions. compared with gan film grwon on si(1 1 1) substrate, no crack is observed in the quaternary ones. two explanations are proposed. first, mismatch-induced strain is relaxed significantly due to gradual changes of in concentration. second, the weak in-n bond is likely to break when the sample is cooled down to the room temperature, which is expected to favor the releasing of thermal stress. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; QUANTUM-WELL STRUCTURES ; PHASE EPITAXY ; GAN LAYER ; STRAIN ; ULTRAVIOLET ; TENSILE ; SILICON ; ALN ; INXALYGA1-X-YN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000226021000010 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2426260 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wu, JJ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, JJ,Li, DB,Lu, Y,et al. Crack-free inalgan quaternary alloy films grown on si(111) substrate by metalorganic chemical vapor deposition[J]. Journal of crystal growth,2004,273(1-2):79-85. |
| APA | Wu, JJ.,Li, DB.,Lu, Y.,Han, XX.,Li, JM.,...&Wang, ZG.(2004).Crack-free inalgan quaternary alloy films grown on si(111) substrate by metalorganic chemical vapor deposition.Journal of crystal growth,273(1-2),79-85. |
| MLA | Wu, JJ,et al."Crack-free inalgan quaternary alloy films grown on si(111) substrate by metalorganic chemical vapor deposition".Journal of crystal growth 273.1-2(2004):79-85. |
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