Photoluminescence of te isoelectronic centers in zns : te under hydrostatic pressure | |
Fang, ZL; Su, FH; Ma, BS; Ding, K; Han, HX; Li, GH; Sou, IK; Ge, WK | |
刊名 | Journal of infrared and millimeter waves |
2004-02-01 | |
卷号 | 23期号:1页码:38-42 |
关键词 | Photoluminescence Hydrostatic pressure Te isoelectronic centers Zns : te |
ISSN号 | 1001-9014 |
通讯作者 | Fang, zl() |
英文摘要 | The photoluminescence of four epitaxial zns: te samples with te concentration from 0.5% to 3.1% was investigated at different temperature and ambient pressure. two well-known emission bands related to the isolated te-1 and te-2 pair isoelectronic centers were observed for the samples with te concentrations of 0.5% and 0.65%. for the samples with te concentrations of 1.4% and 3.1%, only was the te-2-related peak observed. the pressure behaviors of these emission bands, were studied at 15 k. the te-1 -related band has faster pressure shift to higher energy than zns band gap. on the other hand, the pressure coefficient of te-2 -related bands is smaller than that of the zns band gap. according to a koster-slater model, we found that the increase of the density bandwidth of the valence band with pressure is the main reason for the faster shift of the te-1 centers, while the relatively large difference in the pressure behavior of the te-1 and te-2 centers is mainly due to the difference in the pressure-induced enhancement of the impurity potential on te-1 and te-2 centers. |
WOS关键词 | OPTICAL-ABSORPTION ; BOUND EXCITONS ; LUMINESCENCE ; IMPURITIES ; NITROGEN ; CRYSTALS ; ALLOYS |
WOS研究方向 | Optics |
WOS类目 | Optics |
语种 | 英语 |
出版者 | SCIENCE CHINA PRESS |
WOS记录号 | WOS:000189378300008 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2426256 |
专题 | 半导体研究所 |
通讯作者 | Fang, ZL |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China |
推荐引用方式 GB/T 7714 | Fang, ZL,Su, FH,Ma, BS,et al. Photoluminescence of te isoelectronic centers in zns : te under hydrostatic pressure[J]. Journal of infrared and millimeter waves,2004,23(1):38-42. |
APA | Fang, ZL.,Su, FH.,Ma, BS.,Ding, K.,Han, HX.,...&Ge, WK.(2004).Photoluminescence of te isoelectronic centers in zns : te under hydrostatic pressure.Journal of infrared and millimeter waves,23(1),38-42. |
MLA | Fang, ZL,et al."Photoluminescence of te isoelectronic centers in zns : te under hydrostatic pressure".Journal of infrared and millimeter waves 23.1(2004):38-42. |
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