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	4-ps passively mode-locked nd : gd0.5y0.5vo4 laser with a semiconductor saturable-absorber mirror
	He, JL; Fan, YX; Du, J; Wang, YG; Liu, S; Wang, HT; Zhang, LH; Hang, Y
刊名	Optics letters
	2004-12-01
卷号	29期号:23页码:2803-2805
ISSN号	0146-9592
通讯作者	He, jl()
英文摘要	We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a nd:gd0.5y0.5vo4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 mhz was obtained. at 13.6 w of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 w was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%. (c) 2004 optical society of america.
WOS关键词	HIGH-AVERAGE-POWER ; BRAGG REFLECTOR ; ND-GDVO4 LASER ; LOCKING
WOS研究方向	Optics
WOS类目	Optics
语种	英语
出版者	OPTICAL SOC AMER
WOS记录号	WOS:000225280700035
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426189
专题	半导体研究所
通讯作者	He, JL
作者单位	1.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China 2.Shandong Normal Univ, Dept Phys, Jinan 250014, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100022, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
推荐引用方式 GB/T 7714	He, JL,Fan, YX,Du, J,et al. 4-ps passively mode-locked nd : gd0.5y0.5vo4 laser with a semiconductor saturable-absorber mirror[J]. Optics letters,2004,29(23):2803-2805.
APA	He, JL.,Fan, YX.,Du, J.,Wang, YG.,Liu, S.,...&Hang, Y.(2004).4-ps passively mode-locked nd : gd0.5y0.5vo4 laser with a semiconductor saturable-absorber mirror.Optics letters,29(23),2803-2805.
MLA	He, JL,et al."4-ps passively mode-locked nd : gd0.5y0.5vo4 laser with a semiconductor saturable-absorber mirror".Optics letters 29.23(2004):2803-2805.

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