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	Growth of AlxGa1-xP on GaAs substrate by metalorganic vapor phase epitaxy
	Zhang, ZC[1]; Huang, BB[2]; Cui, DL[3]
刊名	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
	2001
卷号	86页码:147-151
关键词	AlGaP metalorganic vapor phase epitaxy back-scattering spectrometry Raman spectroscopy
ISSN号	0921-5107
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2420020
专题	上海大学
作者单位	1.Shanghai Univ, Dept Elect Informat Mat, Shanghai 201800, Peoples R China. 2.Shandong Univ, Inst Crystal Mat, Jinan 250100, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, ZC[1],Huang, BB[2],Cui, DL[3]. Growth of AlxGa1-xP on GaAs substrate by metalorganic vapor phase epitaxy[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2001,86:147-151.
APA	Zhang, ZC[1],Huang, BB[2],&Cui, DL[3].(2001).Growth of AlxGa1-xP on GaAs substrate by metalorganic vapor phase epitaxy.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,86,147-151.
MLA	Zhang, ZC[1],et al."Growth of AlxGa1-xP on GaAs substrate by metalorganic vapor phase epitaxy".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 86(2001):147-151.

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