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Influence of annealing process on the photostimulated luminescence properties of csbr/eu2+
Meng Jia1,2; Zhao Li-Li1; Wu Jie-Hua1; Song Li-Xin1
刊名Journal of inorganic materials
2010-09-01
卷号25期号:9页码:952-956
关键词Csbr:eu2+ Photostimulated luminescence Anneal Electron/hole trap center
ISSN号1000-324X
DOI10.3724/sp.j.1077.2010.00952
通讯作者Meng jia(jiameng@mail.sic.ac.cn)
英文摘要Csbr:eu2+ powders were prepared by solid-state reaction. the photostimulated luminescence (psl) spectra, the differential absorption spectra (das) and psl lifetime spectra were systematically investigated. the results reveal the annealing process can increase the psl intensity and decrease the psl lifetime. the relationship between the annealing atmosphere and psl properties were discussed in detail, and the results reveal that substitutional oxygen ions o-s(-) (s: substitute, o- substitute for br-) and interstitial hydrogen atoms h-i(o) are formed in the annealing process. all of o-s(-), h-i(o) and h-2i(o) are electron trap centers, which are closely related to the formation of hole traps centers.
WOS关键词CSBR ; CRYSTALS ; CENTERS ; EU2+ ; CSBR-EU2+
WOS研究方向Materials Science
WOS类目Materials Science, Ceramics
语种英语
出版者SCIENCE PRESS
WOS记录号WOS:000282866000010
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2410855
专题中国科学院大学
通讯作者Meng Jia
作者单位1.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Meng Jia,Zhao Li-Li,Wu Jie-Hua,et al. Influence of annealing process on the photostimulated luminescence properties of csbr/eu2+[J]. Journal of inorganic materials,2010,25(9):952-956.
APA Meng Jia,Zhao Li-Li,Wu Jie-Hua,&Song Li-Xin.(2010).Influence of annealing process on the photostimulated luminescence properties of csbr/eu2+.Journal of inorganic materials,25(9),952-956.
MLA Meng Jia,et al."Influence of annealing process on the photostimulated luminescence properties of csbr/eu2+".Journal of inorganic materials 25.9(2010):952-956.
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