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	Effects of a tio2 buffer layer on solution-deposited vo2 films: enhanced oxidization durability
	Zhang, Zongtao1,2; Gao, Yanfeng1; Kang, Litao1,2; Du, Jing1,2; Luo, Hongjie1
刊名	Journal of physical chemistry c
	2010-12-23
卷号	114期号:50页码:22214-22220
ISSN号	1932-7447
DOI	10.1021/jp108449m
通讯作者	Gao, yanfeng(yfgao@mail.sic.ac.cn)
英文摘要	In this article, thermochromic vo2 films were deposited on fused quartz and rutile tio2-buffered fused quartz substrates via a solution-phase process. the incorporation of a tio2 buffer layer endures an enhanced oxidization durability of vo2 films under an environment with high oxygen partial pressures. oxidization in furnace during a cooling stage and rapid thermal oxidization (rto) treatments were employed to investigate the evolution of microstructures and compositions of the films in the gradual oxidization processes. oxidization treatments transformed vo2 into v2o5 for films grown on fused quartz substrates, whereas the oxidation process was significantly hindered for films prepared on a tio2 buffer layer, especially around the vo2/tio2 interface. the phenomenon is first reported in this article and is important for practical applications.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; INTELLIGENT WINDOW COATINGS ; METAL-INSULATOR TRANSITIONS ; OXIDE THIN-FILMS ; VANADIUM DIOXIDE ; OPTICAL-PROPERTIES ; PHASE-TRANSITION ; MULTIFUNCTIONAL WINDOW ; RAMAN-SPECTROSCOPY ; TRANSFORMATION
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000285236800045
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2408613
专题	中国科学院大学
通讯作者	Gao, Yanfeng
作者单位	1.Chinese Acad Sci, State Key Lab High Performance Ceram & Superfine, Shanghai Inst Ceram, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Zongtao,Gao, Yanfeng,Kang, Litao,et al. Effects of a tio2 buffer layer on solution-deposited vo2 films: enhanced oxidization durability[J]. Journal of physical chemistry c,2010,114(50):22214-22220.
APA	Zhang, Zongtao,Gao, Yanfeng,Kang, Litao,Du, Jing,&Luo, Hongjie.(2010).Effects of a tio2 buffer layer on solution-deposited vo2 films: enhanced oxidization durability.Journal of physical chemistry c,114(50),22214-22220.
MLA	Zhang, Zongtao,et al."Effects of a tio2 buffer layer on solution-deposited vo2 films: enhanced oxidization durability".Journal of physical chemistry c 114.50(2010):22214-22220.

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