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	Investigation of pressure effects on mnxge1-x
	Wang, X. L.1,2; Ni, M. Y.1,2; Zeng, Z.1,2; Lin, H. Q.3,4
刊名	Journal of magnetism and magnetic materials
	2009-09-01
卷号	321期号:17页码:2575-2577
关键词	Pressure effects Electronic and magnetic properties
ISSN号	0304-8853
DOI	10.1016/j.jmmm.2009.03.045
通讯作者	Zeng, z.(zzeng@theory.issp.ac.cn)
英文摘要	In the present work, the pressure effects on the electronic and magnetic properties of mnxge1-x semiconductor have been investigated. the obtained results show that the lattice constant of mnxge1-x increases with the mn concentration increase. the magnetic moments of mn ions decrease with increasing pressure. the interactions between mn ions is a ruderman-kittel-kasuya-yosida like one over the whole pressure range applied. the role of the pressure actually increases the intensity of the interactions, and consequently the curie temperature of mn-doped ge system increases with the pressure increase. (c) 2009 elsevier b. v. all rights reserved.
WOS关键词	ELECTRON-GAS ; SEMICONDUCTORS ; SIESTA ; FCC
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000266436400015
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2399151
专题	中国科学院大学
通讯作者	Zeng, Z.
作者单位	1.Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China 2.Chinese Acad Sci, Grad Sch, Hefei 230031, Peoples R China 3.Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China 4.Chinese Univ Hong Kong, Inst Theoret Phys, Shatin, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Wang, X. L.,Ni, M. Y.,Zeng, Z.,et al. Investigation of pressure effects on mnxge1-x[J]. Journal of magnetism and magnetic materials,2009,321(17):2575-2577.
APA	Wang, X. L.,Ni, M. Y.,Zeng, Z.,&Lin, H. Q..(2009).Investigation of pressure effects on mnxge1-x.Journal of magnetism and magnetic materials,321(17),2575-2577.
MLA	Wang, X. L.,et al."Investigation of pressure effects on mnxge1-x".Journal of magnetism and magnetic materials 321.17(2009):2575-2577.

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