Terahertz response in single-walled carbon nanotube transistor: a real-time quantum dynamics simulation
Lu, R. F.1,2; Lu, Y. P.2; Lee, S. Y.2; Han, K. L.1; Deng, W. Q.1,2
刊名nanotechnology
2009-12-16
卷号20期号:50页码:505401-505401
通讯作者邓伟侨
产权排序1;1
英文摘要we use time-dependent quantum wavepacket methods to simulate ballistic electron transport in a single-walled carbon nanotube field-effect transistor at terahertz frequencies (similar to 100 ghz-10 thz). we observe an electron resonance phenomenon in a sub-picosecond-scale time domain. our simulation results clearly show that the electron resonance corresponds to the formation of the resonance cavity and the interference of the electron wavepackets, which is directly supported by recent experimental measurements (zhong et al 2008 nat. nanotechnol. 3 201).
WOS标题词science & technology ; technology ; physical sciences
类目[WOS]nanoscience & nanotechnology ; materials science, multidisciplinary ; physics, applied
研究领域[WOS]science & technology - other topics ; materials science ; physics
关键词[WOS]electronics ; scattering ; transport
收录类别SCI
原文出处false
语种英语
WOS记录号WOS:000272166200008
公开日期2010-11-30
内容类型期刊论文
源URL[http://159.226.238.44/handle/321008/102935]  
专题大连化学物理研究所_中国科学院大连化学物理研究所
作者单位1.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
2.Nanyang Technol Univ, Div Chem & Biol Chem, Sch Phys & Math Sci, Singapore 639798, Singapore
推荐引用方式
GB/T 7714
Lu, R. F.,Lu, Y. P.,Lee, S. Y.,et al. Terahertz response in single-walled carbon nanotube transistor: a real-time quantum dynamics simulation[J]. nanotechnology,2009,20(50):505401-505401.
APA Lu, R. F.,Lu, Y. P.,Lee, S. Y.,Han, K. L.,&Deng, W. Q..(2009).Terahertz response in single-walled carbon nanotube transistor: a real-time quantum dynamics simulation.nanotechnology,20(50),505401-505401.
MLA Lu, R. F.,et al."Terahertz response in single-walled carbon nanotube transistor: a real-time quantum dynamics simulation".nanotechnology 20.50(2009):505401-505401.
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