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Growth of la0.5sr0.5coo3 thin film on mgo-buffered si substrate by pulsed laser deposition method: evolution of crystalline orientation, morphology and growth mode with substrate temperature
Wu, Feng; Li, Xiao Min; Yu, Wei Dong; Gao, Xiang Dong; Zhang, Xia
刊名Journal of crystal growth
2007-09-15
卷号307期号:2页码:367-371
关键词Crystal structure Growth mode Reflection high-energy electron diffraction Laser epitaxy
ISSN号0022-0248
DOI10.1016/j.jcrysgro.2007.07.028
通讯作者Li, xiao min(lixm@mail.sic.ac.cn)
英文摘要Growth of la0.5sr0.5coo3 (lsco) thin film on mgo epilayer buffered si substrate was carried out by pulsed laser deposition (pld) technique. by employing various characterization methods, such as reflection high-energy electron diffraction (rheed), x-ray diffraction (xrd), atomic force microscopy (afm), it can be found that substrate temperatures have huge impacts on the crystalline orientations, growth modes and surface morphologies of the lsco thin films. epitaxial lsco thin film can be prepared at optimum substrate temperature. the obtained epitaxial film exhibits an atomic-scale smooth surface (rms = 0.6 nm) and an excellent conductivity (electrical resistivity as low as 600 mu omega cm), indicating that the epitaxial lsco film could be used as a promising candidate of electrode material for the ferroelectric thin films. (c) 2007 elsevier b.v. all rights reserved.
WOS关键词CO-O HETEROSTRUCTURES ; ELECTRICAL-PROPERTIES ; SILICON ; POLARIZATION ; ELECTRODES ; CAPACITORS ; DEPENDENCE ; SIO2/SI ; FATIGUE ; SI(100)
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
出版者ELSEVIER SCIENCE BV
WOS记录号WOS:000250245900020
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2383408
专题中国科学院大学
通讯作者Li, Xiao Min
作者单位1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
推荐引用方式
GB/T 7714
Wu, Feng,Li, Xiao Min,Yu, Wei Dong,et al. Growth of la0.5sr0.5coo3 thin film on mgo-buffered si substrate by pulsed laser deposition method: evolution of crystalline orientation, morphology and growth mode with substrate temperature[J]. Journal of crystal growth,2007,307(2):367-371.
APA Wu, Feng,Li, Xiao Min,Yu, Wei Dong,Gao, Xiang Dong,&Zhang, Xia.(2007).Growth of la0.5sr0.5coo3 thin film on mgo-buffered si substrate by pulsed laser deposition method: evolution of crystalline orientation, morphology and growth mode with substrate temperature.Journal of crystal growth,307(2),367-371.
MLA Wu, Feng,et al."Growth of la0.5sr0.5coo3 thin film on mgo-buffered si substrate by pulsed laser deposition method: evolution of crystalline orientation, morphology and growth mode with substrate temperature".Journal of crystal growth 307.2(2007):367-371.
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