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	Realization of p-type conduction in undoped mgxzn1-xo thin films by controlling mg content
	Li, Y. F.; Yao, B.; Lu, Y. M.; Wei, Z. P.; Gai, Y. Q.; Zheng, C. J.; Zhang, Z. Z.; Li, B. H.; Shen, D. Z.; Fan, X. W.
刊名	Applied physics letters
	2007-12-03
卷号	91期号:23页码:3
ISSN号	0003-6951
DOI	10.1063/1.2816914
通讯作者	Yao, b.(yaobin196226@yahoo.com.cn)
英文摘要	Undoped mgxzn1-xo thin films with mg content of 0 <= x <= 0.20 were grown on c-sapphire substrate by plasma-assisted molecular beam epitaxy. the mgxzn1-xo shows n-type conduction in mg content of x <= 0.05, and the carrier concentration decreases slowly from 10(18) to 10(17) cm(-3) with increasing mg content. however, as x >= 0.10, the mgxzn1-xo begins to show p-type conduction, and the carrier concentration goes down sharply to 10(15) cm(-3) firstly and then increases slowly with increasing mg content from 10(15) to 10(16) cm(-3). the mechanism of transformation from n to p type and change of the carrier concentrations with mg content were investigated by photoluminescence and absorption measurements as well as first-principle calculation. (c) 2007 american institute of physics.
WOS关键词	N-TYPE ; ZNO ; EPITAXY ; DEPENDENCE ; GAAS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000251450600059
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2380544
专题	中国科学院大学
通讯作者	Yao, B.
作者单位	1.Chinese Acad Sci, Changchun Inst Opt, Lab Excited State Proc, Changchun 130033, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China 3.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Li, Y. F.,Yao, B.,Lu, Y. M.,et al. Realization of p-type conduction in undoped mgxzn1-xo thin films by controlling mg content[J]. Applied physics letters,2007,91(23):3.
APA	Li, Y. F..,Yao, B..,Lu, Y. M..,Wei, Z. P..,Gai, Y. Q..,...&Tang, Z. K..(2007).Realization of p-type conduction in undoped mgxzn1-xo thin films by controlling mg content.Applied physics letters,91(23),3.
MLA	Li, Y. F.,et al."Realization of p-type conduction in undoped mgxzn1-xo thin films by controlling mg content".Applied physics letters 91.23(2007):3.

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