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	Ultrathin homogeneous ni(al) germanosilicide layer formation on strained sige with al/ni multi-layers
	Liu, Linjie1,2,3,4; Jin, Lei5; Knoll, Lars1,2; Wirths, Stephan1,2; Buca, Dan1,2; Mussler, Gregor1,2; Hollaender, Bernhard1,2; Xu, Dawei1,2,3,4; Di, Zeng Feng3; Zhang, Miao3
刊名	Microelectronic engineering
	2015-04-02
卷号	137页码:88-91
关键词	Germanosilicide Al mediation Strained sige
ISSN号	0167-9317
DOI	10.1016/j.mee.2014.11.022
通讯作者	Zhao, qing-tai(q.zhao@fz-juelich.de)
英文摘要	We present a systematic investigation of the formation of ni germanosilicide layers on strained sige/si(100) substrates. homogeneous ni germanosilicide layers with smooth surface, sharp interface and low sheet resistance are obtained by annealing thin al/ni multi-layers on sige. the morphology, composition and sheet resistance of the germanosilicide layers are investigated as a function of al percentage and annealing temperature. best results of ni germanosilicide layers are achieved at 400 degrees c with 20% al on fully strained sige layers with ge contents of 36 at.% and 45 at.%. the uniform layers show a ni-5(-si1-xgex)(3) phase. the compressive strain in the remaining sige layer is conserved after germanosilicidation, providing uniform contacts for high hole mobility sige layers for device application. (c) 2014 elsevier b.v. all rights reserved.
WOS关键词	SI1-XGEX ; MOSFETS
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Optics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000355047500017
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2376588
专题	中国科学院大学
通讯作者	Zhao, Qing-Tai
作者单位	1.Forschungszentrum Julich, Peter Grunberg Inst 9, D-52425 Julich, Germany 2.Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.Forschungszentrum Julich, Peter Grunberg Inst 5, D-52425 Julich, Germany
推荐引用方式 GB/T 7714	Liu, Linjie,Jin, Lei,Knoll, Lars,et al. Ultrathin homogeneous ni(al) germanosilicide layer formation on strained sige with al/ni multi-layers[J]. Microelectronic engineering,2015,137:88-91.
APA	Liu, Linjie.,Jin, Lei.,Knoll, Lars.,Wirths, Stephan.,Buca, Dan.,...&Zhao, Qing-Tai.(2015).Ultrathin homogeneous ni(al) germanosilicide layer formation on strained sige with al/ni multi-layers.Microelectronic engineering,137,88-91.
MLA	Liu, Linjie,et al."Ultrathin homogeneous ni(al) germanosilicide layer formation on strained sige with al/ni multi-layers".Microelectronic engineering 137(2015):88-91.

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