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	Passivation effect of atomic layer deposition of al2o3 film on hgcdte infrared detectors
	Zhang, Peng1,3; Ye, Zhen-Hua1; Sun, Chang-Hong1; Chen, Yi-Yu1,3; Zhang, Tian-Ning2,3; Chen, Xin2; Lin, Chun1; Ding, Ring-Jun1; He, Li1
刊名	Journal of electronic materials
	2016-09-01
卷号	45期号:9页码:4716-4720
关键词	Ald al2o3 Minority carrier lifetime C-v characteristics R-v characteristics Baking stability
ISSN号	0361-5235
DOI	10.1007/s11664-016-4686-z
通讯作者	Ye, zhen-hua(zhye@mail.sitp.ac.cn)
英文摘要	The passivation effect of atomic layer deposition of (ald) al2o3 film on a hgcdte infrared detector was investigated in this work. the passivation effect of al2o3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage (c-v) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage (r-v) characteristics of variable-area photodiodes. the minority carrier lifetime, c-v characteristics, and r-v characteristics of hgcdte devices passivated by ald al2o3 film was comparable to those of hgcdte devices passivated by e-beam evaporation of zns/cdte film. however, the baking stability of devices passivated by al2o3 film is inferior to that of devices passivated by zns/cdte film. in future work, by optimizing the ald al2o3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; SURFACE PASSIVATION ; CDTE ; CDTE/HGCDTE
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	SPRINGER
WOS记录号	WOS:000381080000033
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2374426
专题	中国科学院大学
通讯作者	Ye, Zhen-Hua
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Peng,Ye, Zhen-Hua,Sun, Chang-Hong,et al. Passivation effect of atomic layer deposition of al2o3 film on hgcdte infrared detectors[J]. Journal of electronic materials,2016,45(9):4716-4720.
APA	Zhang, Peng.,Ye, Zhen-Hua.,Sun, Chang-Hong.,Chen, Yi-Yu.,Zhang, Tian-Ning.,...&He, Li.(2016).Passivation effect of atomic layer deposition of al2o3 film on hgcdte infrared detectors.Journal of electronic materials,45(9),4716-4720.
MLA	Zhang, Peng,et al."Passivation effect of atomic layer deposition of al2o3 film on hgcdte infrared detectors".Journal of electronic materials 45.9(2016):4716-4720.

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