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	Rectifying behavior in the gan/graded-alxga1?xn/gan double heterojunction structure
	Wang,Caiwei1,2; Jiang,Yang1,2; Ma,Ziguang1,2; Zuo,Peng1,2; Yan,Shen1,2; Die,Junhui1,2; Wang,Lu1,2; Jia,Haiqiang1,2; Wang,Wenxin1,2; Chen,Hong1,2
刊名	Journal of physics d: applied physics
	2018-04-30
卷号	51期号:20
关键词	Rectification Heterojunction Polarization
ISSN号	0022-3727
DOI	10.1088/1361-6463/aab8c6
英文摘要	Abstract rectifying characteristics induced by the polarization fields are achieved in the gan/graded-alxga1?xn/gan double heterojunction structure (dhs). by grading alxga1?xn from x??=??0.4(0.3) to 0.1, the dhs displays a better conductivity for smaller reverse bias than for forward bias voltages (reverse rectifying behavior) which is opposite to p–n junction rectifying characteristics. the mechanism of reverse rectifying behavior is illustrated via calculating the energy band structures of the samples. the band gap narrowing caused by decreasing al composition could compensate the for the band tilt due to the polarization effect in alxga1?xn barriers, thus lowering the barrier height for electron transport from top to bottom. the reverse rectifying behavior could be enhanced by increasing the al content and the thickness of the multi-layer graded alxga1?xn barriers. this work gives a better understanding of the mechanism of carrier transport in a dhs and makes it possible to realize novel gan-based heterojunction transistors.
语种	英语
出版者	IOP Publishing
WOS记录号	IOP:0022-3727-51-20-AAB8C6
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2373999
专题	物理研究所
作者单位	1.Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 2.University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
推荐引用方式 GB/T 7714	Wang,Caiwei,Jiang,Yang,Ma,Ziguang,et al. Rectifying behavior in the gan/graded-alxga1?xn/gan double heterojunction structure[J]. Journal of physics d: applied physics,2018,51(20).
APA	Wang,Caiwei.,Jiang,Yang.,Ma,Ziguang.,Zuo,Peng.,Yan,Shen.,...&Chen,Hong.(2018).Rectifying behavior in the gan/graded-alxga1?xn/gan double heterojunction structure.Journal of physics d: applied physics,51(20).
MLA	Wang,Caiwei,et al."Rectifying behavior in the gan/graded-alxga1?xn/gan double heterojunction structure".Journal of physics d: applied physics 51.20(2018).

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