| Asymmetry in the characteristic of gaas/algaas quantum well infrared photodetector | |
| Li, N; Li, N; Lu, W; Yuan, XZ; Li, ZF; Dou, HF; Liu, JJ; Shen, XC; Jin, L; Li, HW | |
| 刊名 | Journal of infrared and millimeter waves
 |
| 2001-12-01 | |
| 卷号 | 20期号:6页码:411-414 |
| 关键词 | Qwip Asymmetry Desorptionrate |
| ISSN号 | 1001-9014 |
| 通讯作者 | Li, n() ; Li, n() |
| 英文摘要 | The asymmetry in the characteristic of gaas/algaas quantum well infrared photodetector (qwip) due to different ga desorption rate upon opening/closing the al shutter and different diffusion of si doping in the quantum well during mbe growth was analyzed, and that in the parameters of gaas/algaas qwip versus bias was discussed and compared with the materials and devices grown by movcd method. it was found that the asymmetry of qwip grown by mbe is higher than that of qwip grown by mocvd. |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| 出版者 | SCIENCE PRESS |
| WOS记录号 | WOS:000172730800003 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2373927 |
| 专题 | 物理研究所 |
| 通讯作者 | Li, N; Li, N |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Acad Sinica, Inst Phys, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, N,Li, N,Lu, W,et al. Asymmetry in the characteristic of gaas/algaas quantum well infrared photodetector[J]. Journal of infrared and millimeter waves,2001,20(6):411-414. |
| APA | Li, N.,Li, N.,Lu, W.,Yuan, XZ.,Li, ZF.,...&Huang, Y.(2001).Asymmetry in the characteristic of gaas/algaas quantum well infrared photodetector.Journal of infrared and millimeter waves,20(6),411-414. |
| MLA | Li, N,et al."Asymmetry in the characteristic of gaas/algaas quantum well infrared photodetector".Journal of infrared and millimeter waves 20.6(2001):411-414. |
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