Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode

	Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode
	Dai, Pan(代盼); Yang, Wen-Xian(杨文献); Xie, Quan(谢泉); Lu, Shu-Long(陆书龙); Yuan, Zheng-Bing(袁正兵); Xiao, Meng(肖梦); Li, Xue-Fei(李雪飞); Xiao, Qing-Quan(肖清泉); Tan, Ming(谭明); Wu, Yuan-Yuan(吴渊渊)
刊名	Guangzi Xuebao/Acta Photonica Sinica
	2018
其他题名	Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6315]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Dai, Pan,Yang, Wen-Xian,Xie, Quan,et al. Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode[J]. Guangzi Xuebao/Acta Photonica Sinica,2018.
APA	Dai, Pan.,Yang, Wen-Xian.,Xie, Quan.,Lu, Shu-Long.,Yuan, Zheng-Bing.,...&Wu, Yuan-Yuan.(2018).Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode.Guangzi Xuebao/Acta Photonica Sinica.
MLA	Dai, Pan,et al."Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode".Guangzi Xuebao/Acta Photonica Sinica (2018).