Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

	Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity
	Zhao, D. G.; Du, G. T.; Zhang, Y. T.; Li, Mo; Wang, W. J.; Zhang, L. Q.(张立群); Xing, Y.; Liu, S. T.; Chen, P.; Zhu, J. J.
刊名	AIP ADVANCES
	2018
其他题名	Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6255]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Zhao, D. G.,Du, G. T.,Zhang, Y. T.,et al. Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity[J]. AIP ADVANCES,2018.
APA	Zhao, D. G..,Du, G. T..,Zhang, Y. T..,Li, Mo.,Wang, W. J..,...&Liang, F..(2018).Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity.AIP ADVANCES.
MLA	Zhao, D. G.,et al."Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity".AIP ADVANCES (2018).