Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms | |
Zhu, J. J.; Liang, F.; Liu, W.; Zhang, L. Q.(张立群); Liu, S. T.; Yang, J.; Wang, X. W.; Zhao, D. G.; Jiang, D. S.; Chen, P. | |
刊名 | SUPERLATTICES AND MICROSTRUCTURES |
2018 | |
其他题名 | Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.sinano.ac.cn/handle/332007/6207] |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
推荐引用方式 GB/T 7714 | Zhu, J. J.,Liang, F.,Liu, W.,et al. Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms[J]. SUPERLATTICES AND MICROSTRUCTURES,2018. |
APA | Zhu, J. J..,Liang, F..,Liu, W..,Zhang, L. Q..,Liu, S. T..,...&Liu, Z. S..(2018).Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms.SUPERLATTICES AND MICROSTRUCTURES. |
MLA | Zhu, J. J.,et al."Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms".SUPERLATTICES AND MICROSTRUCTURES (2018). |
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