Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability | |
Liu, Zhongyuan; Yang, Ruilong; Lv, Weiming; Yang, Bingchao; Wang, Bochong; Wan, Wenhui; Ge, Yanfeng; Hao, Chunxue; Xiang, Jianyong; Zhang, Baoshun(张宝顺) | |
刊名 | ACS APPLIED MATERIALS & INTERFACES |
2018 | |
其他题名 | Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.sinano.ac.cn/handle/332007/6079] |
专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
推荐引用方式 GB/T 7714 | Liu, Zhongyuan,Yang, Ruilong,Lv, Weiming,et al. Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability[J]. ACS APPLIED MATERIALS & INTERFACES,2018. |
APA | Liu, Zhongyuan.,Yang, Ruilong.,Lv, Weiming.,Yang, Bingchao.,Wang, Bochong.,...&Zeng, Zhongming.(2018).Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability.ACS APPLIED MATERIALS & INTERFACES. |
MLA | Liu, Zhongyuan,et al."Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability".ACS APPLIED MATERIALS & INTERFACES (2018). |
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