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	The influence of La content on properties of PLZT thin films
	Sun, Qian[1]; Deng, Hongmei[2]; Li, Xiaoxi[3]; Yang, Pingxiong[4]; Chu, Junhao[5]
	2011
会议名称	3rd International Photonics and OptoElectronics Meetings
会议日期	2010-11-02
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2306256
专题	上海大学
作者单位	[1]Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China [2]Key Laboratory for Material Microstructures of Shanghai University, Shanghai University, 99 Shangda Rd, Shanghai 200444, China[3]Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China [4]Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China [5]Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
推荐引用方式 GB/T 7714	Sun, Qian[1],Deng, Hongmei[2],Li, Xiaoxi[3],et al. The influence of La content on properties of PLZT thin films[C]. 见:3rd International Photonics and OptoElectronics Meetings. 2010-11-02.

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