O-O bonding stabilized zinc vacancy as origin of p-type doping on Sigma 7 ZnO grain boundary | |
Li, Yong-Hua[1]; Xia, Qin[2]; Guo, Shu-Kuan[3]; Ma, Zhong-Quan[4]; Gao, Yu-Bo[5]; Gong, Xin-Gao[6]; Wei, Su-Huai[7] | |
刊名 | JOURNAL OF APPLIED PHYSICS |
2015 | |
卷号 | 118 |
ISSN号 | 0021-8979 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2268765 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Dept Phys, SHU Solar Energy R&D Lab, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Dept Phys, SHU Solar Energy R&D Lab, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Dept Phys, SHU Solar Energy R&D Lab, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Dept Phys, SHU Solar Energy R&D Lab, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Dept Phys, SHU Solar Energy R&D Lab, Shanghai 200444, Peoples R China. 6.[6]Fudan Univ, Minist Educ, Key Lab Computat Phys Sci, State Key Lab Surface Phys, Shanghai 200433, Peoples R China.,Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China. 7.[7]Natl Renewable Energy Lab, Golden, CO 80401 USA. |
推荐引用方式 GB/T 7714 | Li, Yong-Hua[1],Xia, Qin[2],Guo, Shu-Kuan[3],et al. O-O bonding stabilized zinc vacancy as origin of p-type doping on Sigma 7 ZnO grain boundary[J]. JOURNAL OF APPLIED PHYSICS,2015,118. |
APA | Li, Yong-Hua[1].,Xia, Qin[2].,Guo, Shu-Kuan[3].,Ma, Zhong-Quan[4].,Gao, Yu-Bo[5].,...&Wei, Su-Huai[7].(2015).O-O bonding stabilized zinc vacancy as origin of p-type doping on Sigma 7 ZnO grain boundary.JOURNAL OF APPLIED PHYSICS,118. |
MLA | Li, Yong-Hua[1],et al."O-O bonding stabilized zinc vacancy as origin of p-type doping on Sigma 7 ZnO grain boundary".JOURNAL OF APPLIED PHYSICS 118(2015). |
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