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O-O bonding stabilized zinc vacancy as origin of p-type doping on Sigma 7 ZnO grain boundary
Li, Yong-Hua[1]; Xia, Qin[2]; Guo, Shu-Kuan[3]; Ma, Zhong-Quan[4]; Gao, Yu-Bo[5]; Gong, Xin-Gao[6]; Wei, Su-Huai[7]
刊名JOURNAL OF APPLIED PHYSICS
2015
卷号118
ISSN号0021-8979
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2268765
专题上海大学
作者单位1.[1]Shanghai Univ, Dept Phys, SHU Solar Energy R&D Lab, Shanghai 200444, Peoples R China.
2.[2]Shanghai Univ, Dept Phys, SHU Solar Energy R&D Lab, Shanghai 200444, Peoples R China.
3.[3]Shanghai Univ, Dept Phys, SHU Solar Energy R&D Lab, Shanghai 200444, Peoples R China.
4.[4]Shanghai Univ, Dept Phys, SHU Solar Energy R&D Lab, Shanghai 200444, Peoples R China.
5.[5]Shanghai Univ, Dept Phys, SHU Solar Energy R&D Lab, Shanghai 200444, Peoples R China.
6.[6]Fudan Univ, Minist Educ, Key Lab Computat Phys Sci, State Key Lab Surface Phys, Shanghai 200433, Peoples R China.,Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.
7.[7]Natl Renewable Energy Lab, Golden, CO 80401 USA.
推荐引用方式
GB/T 7714
Li, Yong-Hua[1],Xia, Qin[2],Guo, Shu-Kuan[3],et al. O-O bonding stabilized zinc vacancy as origin of p-type doping on Sigma 7 ZnO grain boundary[J]. JOURNAL OF APPLIED PHYSICS,2015,118.
APA Li, Yong-Hua[1].,Xia, Qin[2].,Guo, Shu-Kuan[3].,Ma, Zhong-Quan[4].,Gao, Yu-Bo[5].,...&Wei, Su-Huai[7].(2015).O-O bonding stabilized zinc vacancy as origin of p-type doping on Sigma 7 ZnO grain boundary.JOURNAL OF APPLIED PHYSICS,118.
MLA Li, Yong-Hua[1],et al."O-O bonding stabilized zinc vacancy as origin of p-type doping on Sigma 7 ZnO grain boundary".JOURNAL OF APPLIED PHYSICS 118(2015).
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