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	Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors
	Gao, Y. N.[1]; Xu, Y. L.[2]; Lu, J. G.[3]; Zhang, J. H.[4]; Li, X. F.[5]
刊名	JOURNAL OF MATERIALS CHEMISTRY C
	2015
卷号	3页码:11497-11504
ISSN号	2050-7526
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2267020
专题	上海大学
作者单位	1.[1]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 3.[3]Zhejiang Univ, Dept Mat Sci & Engn, Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China. 4.[4]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Gao, Y. N.[1],Xu, Y. L.[2],Lu, J. G.[3],et al. Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors[J]. JOURNAL OF MATERIALS CHEMISTRY C,2015,3:11497-11504.
APA	Gao, Y. N.[1],Xu, Y. L.[2],Lu, J. G.[3],Zhang, J. H.[4],&Li, X. F.[5].(2015).Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors.JOURNAL OF MATERIALS CHEMISTRY C,3,11497-11504.
MLA	Gao, Y. N.[1],et al."Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors".JOURNAL OF MATERIALS CHEMISTRY C 3(2015):11497-11504.

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