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	High performance strained Si0.5Ge0.5 quantum-well p-MOSFETs fabricated using a high-kappa/metal-gate last process
	Liu, Chang[1]; Wen, Jiao[2]; Yu, Wenjie[3]; Zhang, Bo[4]; Xue, Zhongying[5]; Chang, Yongwei[6]; Zhu, Lei[7]; Liu, Xinke[8]; Zhao, Yi[9]; Zhang, Miao[10]
刊名	SUPERLATTICES AND MICROSTRUCTURES
	2015
卷号	83页码:210-215
关键词	SiGe Quantum-well Gate-last Hole mobility
ISSN号	0749-6036
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2238965
专题	上海大学
作者单位	1.[1]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China. 3.[2]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 4.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 5.[3]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 6.[4]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 7.[5]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 8.[6]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 9.[7]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 10.[8]Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Chang[1],Wen, Jiao[2],Yu, Wenjie[3],et al. High performance strained Si0.5Ge0.5 quantum-well p-MOSFETs fabricated using a high-kappa/metal-gate last process[J]. SUPERLATTICES AND MICROSTRUCTURES,2015,83:210-215.
APA	Liu, Chang[1].,Wen, Jiao[2].,Yu, Wenjie[3].,Zhang, Bo[4].,Xue, Zhongying[5].,...&Zhao, Qing-Tai[12].(2015).High performance strained Si0.5Ge0.5 quantum-well p-MOSFETs fabricated using a high-kappa/metal-gate last process.SUPERLATTICES AND MICROSTRUCTURES,83,210-215.
MLA	Liu, Chang[1],et al."High performance strained Si0.5Ge0.5 quantum-well p-MOSFETs fabricated using a high-kappa/metal-gate last process".SUPERLATTICES AND MICROSTRUCTURES 83(2015):210-215.

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