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	Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN
	Gu, Wen[1]; Wu, Xingyang[2]; Song, Peng[3]; Zhang, Jianhua[4]
刊名	APPLIED SURFACE SCIENCE
	2015
卷号	331页码:156-160
关键词	Ga-doped ZnO Ohmic contact p-GaN Copper sulfide Copper oxidea
ISSN号	0169-4332
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2237032
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai, Peoples R China. 2.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai, Peoples R China. 3.[2]Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai, Peoples R China. 4.[3]Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai, Peoples R China. 5.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai, Peoples R China. 6.[4]Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai, Peoples R China. 7.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai, Peoples R China.
推荐引用方式 GB/T 7714	Gu, Wen[1],Wu, Xingyang[2],Song, Peng[3],et al. Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN[J]. APPLIED SURFACE SCIENCE,2015,331:156-160.
APA	Gu, Wen[1],Wu, Xingyang[2],Song, Peng[3],&Zhang, Jianhua[4].(2015).Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN.APPLIED SURFACE SCIENCE,331,156-160.
MLA	Gu, Wen[1],et al."Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN".APPLIED SURFACE SCIENCE 331(2015):156-160.

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